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參數資料
| 型號： | MC2GH512DMCA-2SA00 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | SAMSUNG MultiMediaCard |
| 中文描述： | 三星多媒體 |
| 文件頁數： | 28/102頁 |
| 文件大小： | 1384K |
| 代理商： | MC2GH512DMCA-2SA00 |
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MultiMediaCard
TM
28
Sep.22.2005
Revision 0.3
WRITE_BLK_MISALIGN
Defines if the data block to be written by one command can be spread over more than one physical block of the memory
device. The size of the memory block is defined in WRITE_BL_LEN.
WRITE_BLK_MISALIGN
=0 signals that crossing physical block boundaries is invalid.
WRITE_BLK_MISALIGN
=1 signals that crossing physical block boundaries is allowed.
READ_BLK_MISALIGN
Defines if the data block to be read by one command can be spread over more than one physical block of the memory
device. The size of the memory block is defined in READ_BL_LEN.
READ_BLK_MISALIGN
=0 signals that crossing physical block boundaries is invalid.
READ_BLK_MISALIGN
=1 signals that crossing physical block boundaries is allowed.
DSR_IMP
Defines if the configurable driver stage is integrated on the card. If set, a driver stage register (DSR) must be implemented
also (see Chapter 5.5.6).
C_SIZE
This parameter is used to compute the card capacity. The memory capacity of the card is computed from the entries
C_SIZE, C_SIZE_MULT and READ_BL_LEN as follows:
memory capacity = BLOCKNR * BLOCK_LEN
where
BLOCKNR = (C_SIZE+1) * MULT
MULT = 2
C_SIZE_MULT+2
(C_SIZE_MULT < 8)
BLOCK_LEN = 2
READ_BL_LEN
, (READ_BL_LEN < 12)
Therefore, the maximal capacity which can be coded is 4096*512*2048 = 4 GBytes. Example: A 4 MByte card with
BLOCK_LEN = 512 can be coded by C_SIZE_MULT = 0 and C_SIZE = 2047.
VDD_R_CURR_MIN, VDD_W_CURR_MIN
The maximum values for read and write currents at the minimal power supply V
DD
are coded as follows:
The values in these fields are valid when the card is not in high speed mode. When the card is in high speed mode, the
current consumption is chosen by the host, from the power classes defined in the PWR_ff_vvv registers, in the EXT_CSD
register.
DSR_IMP
DSR type
0
1
DSR is not implemented
DSR implemented
VDD_R_CURR_MIN
VDD_W_CURR_MIN
2:0
Code for current consumption @ V
DD
0=0.5mA; 1=1mA; 2=5mA; 3=10mA; 4=25mA; 5=35mA; 6=60mA; 7=100mA
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相關代理商/技術參數 |
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|---|---|
| MC2GH512NMCA-2SA00 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SAMSUNG MultiMediaCard |
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| MC2M | 制造商:G & J HALL 功能描述:STEP DRILL 10-20MM 1MM STEP 制造商:G & J HALL 功能描述:STEP DRILL, 10-20MM, 1MM STEP 制造商:G & J HALL 功能描述:STEP DRILL, 10-20MM, 1MM STEP; Drill Bit Size Metric:10mm; Overall Length:77.5mm; SVHC:No SVHC (19-Dec-2012); Drill Bit Type:Step; Material:Steel; Material Thickness Max:4mm; Range:10mm - 20mm; Range:10mm - 20mm; Shank Dia:9mm; ;RoHS Compliant: NA |
| MC2N2906A | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -60V TO-18; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency Typ ft:200MHz; Power Dissipation Pd:400mW; DC Collector Current:-600mA; DC Current Gain hFE:40; No. of Pins:3;RoHS Compliant: Yes |
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