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參數資料
| 型號： | MC33253 |
| 廠商： | Motorola, Inc. |
| 英文描述： | Full Bridge Pre-Driver |
| 中文描述： | 全橋預驅動器 |
| 文件頁數： | 7/15頁 |
| 文件大小： | 615K |
| 代理商： | MC33253 |
MC33253
rev3.0 - 7/15
MC33253
Figure 3. Dynamic Characteristics
Driver Characteristics
Turn-On
For turn-on the current required to charge the gate source capacitor Ciss in the specified time can be calculated as follows:
Peak Current for Rise/Fall Time (tr) and a typical PowerMosFET Gate Charge Qg. IP = Qg/tr = 75 nC/80 ns
a
1.0 A
Turn-Off
The peak current for turn-off can be obtained in the same way as for turn-on. In addition to the dynamic current, required to
turn-off or turn-on the FET, various application related switching scenarios have to be considered:
The output driver sources a peak current of up to 1A for 200 ns to turn on the gate. After 200 ns 100 mA are provided
continuously to maintain the gate charged. The output driver sinks a peak current of up to 1A for 200 ns to turn off the gate. After
200 ns 100 mA are sinked continuously to maintain the gate discharged. In order to withstand high dV/dt spikes a low resistive
path between gate and source is implemented during the off state.
Figure 4. OFF-State Driver Requirement
50%
50%
90%
t
f
IN_HS
or IN_LS
GATE_HS
or GATE_LS
10%
50%
50%
90%10%
t
pd
t
pd
t
r
/IN_HS
or /IN_LS
50%
50%
Driver Requirement: Low
Resistive Gate-Source
Path during OFF-State
Flyback Spike charge LS-Gate via C
rss
Charge Current I
rss
up to 2.0 A! Uncon-
trolled Turn-On of Low Side FET
C
iss
C
iss
C
rss
C
rss
V
BAT
Driver Requirement: Low Resistive
Gate Source Path during OFF-State.
High Peak Sink Current Capab.
Flyback Spike pull down HS-
Drain V
GS
Increase Delayed
Turn-Off of High Side FET
C
iss
C
iss
C
rss
C
rss
V
BAT
Driver Requirement:
High Peak Sink Current Capab.
Flyback Spike charge LS-Gate via
C
rss
Charge Current I
rss
up to 2.0 A!
Delayed Turn-Off of Low Side FET
C
iss
C
iss
C
rss
C
rss
V
BAT
Driver Requirement: Low Resistive
Gate-Source Path during OFF-State
C
iss
C
iss
C
rss
C
rss
V
BAT
Flyback Spike pull down HS-
Drain V
GS
Increase Uncontrolled
Turn-On of High Side FET
OFF
OFF
OFF
OFF
g_ls
g_ls
g_ls
g_ls
g_hs
g_hs
g_hs
g_hs
I
LOAD
L1
I
LOAD
L1
I
LOAD
L1
I
LOAD
L1
I
rss
V
GATE
V
GATE
-V
DRN
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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| MC33260DR2 | 功能描述:功率因數校正 IC Critical Conduction RoHS:否 制造商:Fairchild Semiconductor 開關頻率:300 KHz 最大功率耗散: 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Reel |
| MC33260DR2G | 功能描述:功率因數校正 IC Critical Conduction Mode PFC RoHS:否 制造商:Fairchild Semiconductor 開關頻率:300 KHz 最大功率耗散: 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Reel |
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