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參數資料
型號: MC34152P
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Single Output LDO, 250mA, Fixed(3.3V), Low Noise, Fast Transient Response 8-SOIC -40 to 85
中文描述: 1.5 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8
封裝: PLASTIC, DIP-8
文件頁數: 6/12頁
文件大小: 151K
代理商: MC34152P
MC34152, MC33152, NCV33152
http://onsemi.com
6
I
I
Figure 14. Drive Output Rise and Fall Time
versus Load Capacitance
Figure 15. Supply Current versus Drive
Output Load Capacitance
Figure 16. Supply Current versus Input Frequency
Figure 17. Supply Current versus Supply Voltage
C
L
, OUTPUT LOAD CAPACITANCE (nF)
t
t
f
t
r
80
60
40
20
0
0.1
1.0
10
V
CC
= 12 V
V
IN
= 0 V to 5.0 V
T
A
= 25
°
C
C
L
, OUTPUT LOAD CAPACITANCE (nF)
80
60
40
20
00.1
1.0
10
V
CC
= 12 V
Both Logic Inputs Driven
0 V to 5.0 V
50% Duty Cycle
Both Drive Outputs Loaded
T
A
= 25
°
C
f = 500 kHz
f = 200 kHz
f = 50 kHz
80
60
40
20
010 k
100
1.0 M
I
1
2
3
4
Both Logic Inputs Driven
0 V to 5.0 V,
50% Duty Cycle
Both Drive Outputs Loaded
T
A
= 25
°
C
1 V
CC
= 18 V, C
L
= 2.5 nF
2 V
CC
= 12 V, C
L
= 2.5 nF
3 V
CC
= 18 V, C
L
= 1.0 nF
4 V
CC
= 12 V, C
L
= 1.0 nF
f, INPUT FREQUENCY (Hz)
V
CC
, SUPPLY VOLTAGE (V)
8.0
6.0
4.0
2.0
00
4.0
8.0
12
16
T
A
= 25
°
C
Logic Inputs at V
CC
Low State Drive Outputs
Logic Inputs Grounded
High State Drive Outputs
APPLICATIONS INFORMATION
Description
The MC34152 is a dual noninverting high speed driver
specifically designed to interface low current digital
circuitry with power MOSFETs. This device is constructed
with Schottky clamped Bipolar Analog technology which
offers a high degree of performance and ruggedness in
hostile industrial environments.
Input Stage
The Logic Inputs have 170 mV of hysteresis with the
input threshold centered at 1.67 V. The input thresholds are
insensitive to V
CC
making this device directly compatible
with CMOS and LSTTL logic families over its entire
operating voltage range. Input hysteresis provides fast
output switching that is independent of the input signal
transition time, preventing output oscillations as the input
thresholds are crossed. The inputs are designed to accept a
signal amplitude ranging from ground to V
CC
. This allows
the output of one channel to directly drive the input of a
second channel for masterslave operation. Each input has
a 30 k pulldown resistor so that an unconnected open
input will cause the associated Drive Output to be in a
known low state.
Output Stage
Each totem pole Drive Output is capable of sourcing and
sinking up to 1.5 A with a typical ‘on’ resistance of 2.4
at 1.0 A. The low ‘on’ resistance allows high output
currents to be attained at a lower V
CC
than with
comparative CMOS drivers. Each output has a 100 k
pulldown resistor to keep the MOSFET gate low when V
CC
is less than 1.4 V. No over current or thermal protection has
been designed into the device, so output shorting to V
CC
or
ground must be avoided.
Parasitic inductance in series with the load will cause the
driver outputs to ring above V
CC
during the turnon
transition, and below ground during the turnoff transition.
With CMOS drivers, this mode of operation can cause a
destructive output latchup condition. The MC34152 is
immune to output latchup. The Drive Outputs contain an
internal diode to V
CC
for clamping positive voltage
transients. When operating with V
CC
at 18 V, proper power
supply bypassing must be observed to prevent the output
ringing from exceeding the maximum 20 V device rating.
Negative output transients are clamped by the internal NPN
pullup transistor. Since full supply voltage is applied across
相關PDF資料
PDF描述
MC33152 High Speed Dual MOSFET Drivers(高速雙MOSFET驅動器)
MC34152 High Speed Dual MOSFET Drivers(高速雙MOSFET驅動器)
MC34152DR2 HIGH SPEED DUAL MOSFET DRIVERS
MC34152DR2G HIGH SPEED DUAL MOSFET DRIVERS
MC34152D Single Output LDO, 250mA, Fixed(3.3V), Low Noise, Fast Transient Response 5-SOT-23 -40 to 85
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參數描述
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