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參數資料
型號: MC34164SN-5T1G
廠商: ON SEMICONDUCTOR
元件分類: 電源管理
英文描述: MICROPOWER UNDERVOLTAGE SENSING CIRCUITS
中文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
封裝: LEAD FREE, PLASTIC, TSOP-5
文件頁數: 6/8頁
文件大小: 150K
代理商: MC34164SN-5T1G
MC34164 MC33164
6
MOTOROLA ANALOG IC DEVICE DATA
Figure 14. Low Voltage Microprocessor Reset With Additional Hysteresis
(MC3X164–5 Shown)
Power
Supply
1.2 Vref
Microprocessor
Circuit
2 (2)
RL
1 (1)
3 (4)
Reset
Comparator hysteresis can be increased with the addition of resistor RH. The hysteresis equation has been simplified and does not account for the change of input current
Iin as Vin crosses the comparator threshold (Figure 8). An increase of the lower threshold
Vth(lower) will be observed due to Iin which is typically 10
μ
A at 4.3 V. The
equations are accurate to
±
10% with RH less than 1.0 k
and RL between 4.3 k
and 43 k
.
VH
4.3 RH
RL
RH
MC3X164–5
Iin
Vin
Test Data
VH
(mV)
Vth
(mV)
RH
(
)
RL
(k
)
60
103
123
160
155
199
280
262
306
357
421
530
0
1.0
1.0
1.0
2.2
2.2
2.2
4.7
4.7
4.7
4.7
4.7
0
100
100
100
220
220
220
470
470
470
470
470
43
10
6.8
4.3
10
6.8
4.3
10
8.2
6.8
5.6
4.3
+ 0.06
Vth(lower)
10 RH x 10– 6
where: RH
1.0 k
43 k
RL
4.3 k
Figure 15. Voltage Monitor
Figure 16. Solar Powered Battery Charger
Figure 17. MOSFET Low Voltage Gate Drive Protection Using the MC3X164–5
1.2 Vref
2 (2)
270
1 (1)
3 (4)
Power
Supply
1.2 Vref
2 (2)
1.0 k
1 (1)
3 (4)
1.2 Vref
2 (2)
1 (1)
3 (4)
Solar
Cells
RL
MTP3055EL
MC3X164–5
VCC
4.3V
Overheating of the logic level power MOSFET due to insufficient
gate voltage can be prevented with the above circuit. When the
input signal is below the 4.3 V threshold of the MC3X164–5, its
output grounds the gate of the L2 MOSFET.
相關PDF資料
PDF描述
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