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參數資料
型號: MC74F3893A
廠商: Motorola, Inc.
英文描述: QUAD FUTUREBUS BACKPLANE TRANSCEIVER
中文描述: 四FUTUREBUS背板收發器
文件頁數: 3/5頁
文件大小: 46K
代理商: MC74F3893A
4-275
FAST AND LS TTL DATA
MC74F3893A
DC CHARACTERISTICS
(Over Recommended Operating Free-Air Temperature Range
Unless otherwise specified)
Symbol
Parameter
Limits
Unit
(Note 1)
Min
Typ (2)
Max
Test Conditions
VOH
High-Level Output Voltage
Rn
2.5
V
VCC = MIN: VIL = 1.3 V; RE = 0.8 V:
IOH = MAX
VOHB
High-Level Output Bus Voltage
I/On
1.9
V
VCC = MAX: DN = DE = 0.8 V:
VT = 2.0 V: RT = 10
:
RE = 2.0 V
IOH = MAX
VOL
Output LOW Voltage
Rn
0.35
0.5
V
VCC = MIN: VIN = 1.8 V; RE = 0.8 V: IOL =
6.0 mA
VOLB
Low Level Output Bus Voltage
I/On
0.75
1.0
1.2
V
Dn = DE = VIH: IOL = 100 mA
Dn = DE = VIH: IOL = 80 mA
0.75
1.0
1.1
VOCB
Driver Output Positive
Clamp Voltage
I/On
2.9
V
VCC = MAX or 0 V: DN =
RE = 2.0 V
I/On = 1.0 mA
3.2
DE = 0.8 V:
I/On = 10 mA
VIK
II
IIH
Input Clamp Diode Voltage
–0.73
–1.2
V
VCC = MIN, II = IIK
VCC = MAX: VI = 7.0 V: DE = RE = Dn = VCC
VCC = MAX: DE = RE = Dn = 2.5 V
VCC = 0 V: DN = DE = 0.8 V:
I/On = 1.2 V: RE = 0 V:
Input Current at Maximum Input Voltage
100
μ
A
High Level Input Current
Dn, RE, DE
20
μ
A
IIHB
High-Level I/O Bus Current
(Power Off)
I/On
100
μ
A
IIL
Low-Level Input Current
RE
–100
VCC = MAX:
DE = 4.5 V
Dn
DE
–200
μ
A
–500
VI = 0.5V:
VCC = MAX: Dn = DE = 0.8 V:
I/On = 0.75 V : RE = 0 V:
Dn = 4.5 V
IILB
Low-Level I/O Bus Current
(Power On)
I/On
–250
100
μ
A
IOZH
Off-State Output Current, High-
Level Voltage Applied
Rn
20
μ
A
VO = 2.5V:
RE = 2.0 V
VCC = MAX:
IOZL
Off-State Output Current,
Low-Level Voltage Applied
–20
VCC = MAX:
VO = 0.5 V: RE = 2.0 V
IOS
Output Short Circuit Current
(Note 3)
–80
–200
mA
Dn = 1.2 V: VO = 0 V: RE
= 0.8 V
ICC
Supply Current (Total )
55
80
mA
VCC = MAX: (RE = VIH or VIL)
NOTES:
1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable device type.
2. All typical values are at VCC = 5.0 V, TA = + 25
°
C.
3. Not more than one output should be shorted at a time. For testing IOS, the use of high-speed test apparatus and/or sample-and-hold techniques are prefer-
able in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting of a High output may raise the chip
temperature well above normal and thereby cause invalid readings in other parameter tests. In any sequence of parameter tests, IOS tests should be
performed last.
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