
2000 IXYS All rights reserved
1 - 4
V
RSM
V
DSM
V
V
RRM
V
DRM
V
Type
1300
1500
1700
1900
1200
1400
1600
1800
MCC 225-12io1
MCC 225-14io1
MCC 225-16io1
MCC 225-18io1
MCD 225-12io1
MCD 225-14io1
MCD 225-16io1
MCD 225-18io1
Symbol
Test Conditions
Maximum Ratings
I
TRMS
I
TAVM
I
TSM
, I
FSM
T
VJ
= T
T
C
= 85 C; 180 sine
T
VJ
= 45 C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
= 45 C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
= T
f =50 Hz, t
P
=200 s
V
D
= 2/3 V
DRM
I
G
= 1 A,
di
G
/dt = 1 A/ s
T
VJ
= T
; V
= 2/3 V
R
GK
= ; method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
400
221
A
A
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
8000
8500
A
A
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
7000
7700
A
A
i
2
dt
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
320 000
300 000
A
2
s
A
2
s
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
245 000
246 000
A
2
s
A
2
s
(di/dt)
cr
repetitive, I
T
= 750 A
100
A/ s
non repetitive, I
T
= I
TAVM
500
A/ s
(dv/dt)
cr
1000
V/ s
P
GM
t
P
=
t
P
= 500 s
30 s
120
60
20
10
W
W
W
V
C
C
C
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
-40...+130
130
-40...+125
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
t = 1 min
t = 1 s
3000
3600
V~
V~
M
d
4.5-7/40-62 Nm/lb.in.
11-13/97-115 Nm/lb.in.
750
Weight
g
Features
G
International standard package
G
Direct copper bonded Al
2
O
3
-ceramic
with copper base plate
G
Planar passivated chips
G
Isolation voltage 3600 V~
G
UL registered E 72873
G
Keyed gate/cathode twin pins
Applications
G
Motor control, softstarter
G
Power converter
G
Heat and temperature control for
industrial furnaces and chemical
processes
G
Lighting control
G
Solid state switches
Advantages
G
Simple mounting
G
Improved temperature and power
cycling
G
Reduced protection circuits
I
TRMS
= 2x 400 A
I
TAVM
= 2x 221 A
V
RRM
= 1200-1800 V
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
MCC 225
MCD 225
Thyristor Modules
Thyristor/Diode Modules
1
2
3
7654
MCD
MCC
3
6 7 1
5 4 2
3
1
5 4 2