欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: MCH3310
廠商: Sanyo Electric Co.,Ltd.
英文描述: Ultrahigh-Speed Switching Applications
中文描述: 超高速開關應用
文件頁數(shù): 1/4頁
文件大小: 27K
代理商: MCH3310
MCH3310
No.6863-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6863
MCH3310
Package Dimensions
unit : mm
2167
[MCH3310]
13001 TS IM TA-3060
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
0
0
2
1
2.0
0.65
0.3
0
0
1
2
3
0.15
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
--30
±
20
--1.5
--6.0
0.9
150
PW
10
μ
s, duty cycle
1%
Mounted on a ceramic board (900mm
2
0.8mm)
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGS=
±
16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--0.8A
ID=--0.8A, VGS=--10V
ID=--0.4A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
--30
V
μ
A
μ
A
V
S
m
m
pF
pF
pF
--1
±
10
--2.6
--1.2
1.0
1.5
210
360
185
30
20
Static Drain-to-Source On-State Resistance
270
500
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : JK Continued on next page.
相關PDF資料
PDF描述
MCH3312 Ultrahigh-Speed Switching Applications
MCH3314 MCH3314
MCH3317 MCH3317
MCH3318 P CHANNEL MOS SILICON TRANSISTOR
MCH3339 MCH3339
相關代理商/技術參數(shù)
參數(shù)描述
MCH3310-TL-E 制造商:SANYO 功能描述:Pch 30V 1.5A 0.27 lbogR Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 30V 1.5A SC-82
MCH3312 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications
MCH3312-TL-E 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 30V 2A SC-82
MCH3314 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MCH3314
MCH3315 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications
主站蜘蛛池模板: 达孜县| 陵水| 桐柏县| 渑池县| 衢州市| 庆云县| 遵义市| 壤塘县| 景宁| 邯郸县| 丰台区| 道真| 普宁市| 正镶白旗| 克山县| 浙江省| 离岛区| 长兴县| 鲁甸县| 南漳县| 敖汉旗| 蛟河市| 巴林右旗| 宁陕县| 宿州市| 辉南县| 社旗县| 衢州市| 个旧市| 泽州县| 富民县| 陇南市| 板桥市| 中江县| 江山市| 邢台县| 永春县| 连平县| 青川县| 平邑县| 中超|