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參數(shù)資料
| 型號(hào)： | MCH3310 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultrahigh-Speed Switching Applications |
| 中文描述： | 超高速開關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 27K |
| 代理商： | MCH3310 |
MCH3310
No.6863-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6863
MCH3310
Package Dimensions
unit : mm
2167
[MCH3310]
13001 TS IM TA-3060
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
0
0
2
1
2.0
0.65
0.3
0
0
1
2
3
0.15
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
--30
±
20
--1.5
--6.0
0.9
150
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (900mm
2
0.8mm)
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGS=
±
16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--0.8A
ID=--0.8A, VGS=--10V
ID=--0.4A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
--30
V
μ
A
μ
A
V
S
m
m
pF
pF
pF
--1
±
10
--2.6
--1.2
1.0
1.5
210
360
185
30
20
Static Drain-to-Source On-State Resistance
270
500
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : JK Continued on next page.
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