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參數(shù)資料
| 型號(hào)： | MCH4009 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 40 mA, 3.5 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MCPH4, 4 PIN |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 55K |
| 代理商： | MCH4009 |
MCH4009
No. A0389-1/13
Features
Low-noise use
: NF=1.1dB typ (f=2GHz).
High cut-off frequency : fT=25GHz typ (VCE=3V).
Low operating voltage.
High gain
:
S21e2=17dB typ (f=2GHz).
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
10
V
Collector-to-Emitter Voltage
VCEO
3.5
V
Emitter-to-Base Voltage
VEBO
2.5
V
Collector Current
IC
40
mA
Collector Dissipation
PC
120
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=5V, IE=0A
1.0
A
Emitter Cutoff Current
IEBO
VEB=1V, IC=0A
1.0
A
DC Current Gain
hFE
VCE=1V, IC=5mA
50
120
Gain-Bandwidth Product
fT
VCE=3V, IC=20mA
20
25
GHz
Reverse Transfer Capacitance
Cre
VCB=1V, f=1MHz
0.15
pF
Forward Transfer Gain
S21e21VCE=1V, IC=5mA, f=2GHz
9
13.5
dB
S21e22VCE=3V, IC=20mA, f=2GHz
17
dB
Noise Figure
NF
VCE=1V, IC=5mA, f=2GHz
1.1
1.5
dB
1dB Compression Point
PO(1dB)
VCE=3V, IC=20mA, f=2GHz
13.5
dBm
3rd Order Intercept Point
OIP3
VCE=3V, IC=20mA, f=2GHz
23
dBm
Marking : GG
82306 / 53106AB MS IM TB-00002266
MCH4009
NPN Epitaxial Planar Silicon Transistor
UHF to X Band Low-Noise Amplifier
and OSC Applications
Ordering number : ENA0389
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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| MCH4009-TL-E | 功能描述:TRANS NPN 3.5V 40MA MCPH4 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
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| MCH4013 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor UHF to X Band Low-Noise Amplifier and OSC Applications |
| MCH4013_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:UHF to X Band Low-Noise Amplifier and OSC Applications |
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