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參數資料
型號: MCH6401
廠商: Sanyo Electric Co.,Ltd.
英文描述: Ultrahigh-Speed Switching Applications
中文描述: 超高速開關應用
文件頁數: 1/4頁
文件大小: 27K
代理商: MCH6401
MCH6401
No.6779-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6779
MCH6401
Package Dimensions
unit : mm
2193
[MCH6401]
N1500 TS IM TA-2907
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
0
0
2
1
2.0
0.65
0.3
0
0
0.15
1
3
2
6
4
5
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
20
±
10
4
PW
10
μ
s, duty cycle
1%
Mounted on a ceramic board (900mm
2
0.8mm)
16
1.5
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=
±
8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=4V
ID=1A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
20
V
μ
A
μ
A
V
S
m
m
pF
pF
pF
1
±
10
1.3
0.4
4.3
6.2
45
60
370
120
80
Static Drain-to-Source On-State Resistance
59
84
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : KA Continued on next page.
相關PDF資料
PDF描述
MCH6402 Ultrahigh-Speed Switching Applications
MCH6405 Ultrahigh-Speed Switching Applications
MCH6536 MCH6536
MCH6601 Ultrahigh-Speed Switching Applications
MCH6603 Ultrahigh-Speed Switching Applications
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