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參數(shù)資料
| 型號(hào)： | MCH6609 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultrahigh-Speed Switching Applications |
| 中文描述： | 超高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 30K |
| 代理商： | MCH6609 |
MCH6609
No.7041-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Composite type with 2 MOSFETs contained in a single
package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
--50
±
10
--0.28
--1.1
0.8
150
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (900mm
2
0.8mm)1unit
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=--1mA, VGS=0
VDS=--50V, VGS=0
VGS=
±
8V, VDS=0
VDS=--10V, ID=--100
μ
A
VDS=--10V, ID=--70mA
ID=--70mA, VGS=--4V
ID=--40mA, VGS=--2.5V
ID=--10mA, VGS=--1.5V
--50
V
μ
A
μ
A
V
mS
--10
±
10
--1.4
--0.4
170
240
5.1
6.6
8.4
20
Static Drain-to-Source On-State Resistance
6
10
Marking : FI
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7041
MCH6609
Package Dimensions
unit : mm
2173A
[MCH6609]
O1501 TS IM TA-2464
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
0
0
0
2
1
2.0
0.65
0.3
0
0.15
1
1
2
3
6
5
4
3
2
5
4
6
Preliminary
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCH6610 | Ultrahigh-Speed Switching Applications |
| MCH6611 | Ultrahigh-Speed Switching Applications |
| MCH6612 | Ultrahigh-Speed Switching Applications |
| MCH6613 | Ultrahigh-Speed Switching Applications |
| MCH6614 | Ultrahigh-Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCH6610 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| MCH6611 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| MCH6612 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| MCH6613 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| MCH6613_06 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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