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參數資料
| 型號： | MCH6615 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultrahigh-Speed Switching Applications |
| 中文描述： | 超高速開關應用 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 44K |
| 代理商： | MCH6615 |
MCH6615
No.6796-1/6
Features
The MCH6615 incorporates two elements in the same
package which are N-channel and P-channel low
ON resistance and high-speed switching MOSFETs,
thereby enabling high-density mounting.
Low ON-resistance.
2.5V drive.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
MCH6615
Package Dimensions
unit : mm
2173
[MCH6615]
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel and P-Channel Silicon MOSFETs
Ultrahigh-Speed Switching Applications
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
0
0
2
1
2.0
0.65
0.3
0
0
0.15
1
3
2
6
4
5
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
N-channel
P-channel
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
30
--30
±
10
--0.4
--1.6
±
10
0.65
2.6
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (900mm
2
0.8mm)1unit
0.8
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=
±
8V, VDS=0
VDS=10V, ID=100
μ
A
VDS=10V, ID=150mA
ID=150mA, VGS=4V
ID=80mA, VGS=2.5V
ID=10mA, VGS=1.5V
30
V
μ
A
μ
A
V
mS
10
±
10
1.3
0.4
400
560
0.9
1.2
2.6
1.2
1.7
5.2
Static Drain-to-Source On-State Resistance
Marking : FP Continued on next page.
20101 TS IM TA-2910
Ordering number : ENN6796
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MCH6615-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETNP CHSC-82 |
| MCH6616 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| MCH6616-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NN CH 20V 1.6A SC-82 |
| MCH6617 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P CHANNEL MOS SILICON TRANSISTOR |
| MCH6617-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET PP CH 20V 1A MCPH6 制造商:ON Semiconductor 功能描述: |
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