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參數資料
| 型號： | MCM44C256B |
| 廠商： | Motorola, Inc. |
| 英文描述： | 4MB R4000 Secondary Cache Fast Static RAM Module Set |
| 中文描述： | 二級緩存4MB的R4000的快速靜態存儲器模塊集 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 81K |
| 代理商： | MCM44C256B |
MCM44256B SERIES
3
MOTOROLA FAST SRAM
ABSOLUTE MAXIMUM RATINGS
(Voltages Referenced to VSS = 0 V)
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC
Vin, Vout
Iout
PD
Tbias
Tstg
– 0.5 to 7.0
V
Voltage Relative to VSS
Output Current (per I/O)
– 0.5 to VCC + 0.5
±
30
V
mA
Power Dissipation
10
W
Temperature Under Bias
– 10 to + 85
°
C
Storage Temperature
– 25 to +125
°
C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V
±
10%, TA = 0 to + 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
(Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
VIH
4.5
5.0
5.5
V
Input High Voltage
(DQ0 – 35, TDQ0 – 7, WE, A0)
(A1 – A17, OE, DCS, TCS)
2.2
2.0
—
—
VCC + 0.3 V*
VCC + 0.3 V*
V
Input Low Voltage
VIL
– 0.5
**
—
0.8
V
*VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width
≤
20 ns).
**VIL (min) = – 3.0 V ac (pulse width
≤
20 ns).
DC CHARACTERISTICS
Parameter
Symbol
Min
Typ
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Output Leakage Current (G, xCS = VIH, Vout = 0 to VCC)
AC Supply Current (G, xCS = VIL, Iout = 0 mA)
Output Low Voltage (IOL = + 8 mA)
OUtput High Voltage (IOH = – 4.0 mA)
NOTE: Good decoupling of the local power supply should always be used.
Ilkg(I)
Ilkg(O)
±
10
μ
A
±
10
μ
A
ICCA
VOL
VOH
1750
mA
0.4
V
2.4
V
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Typ
Max
Unit
Input Capacitance
(A0, WE)
(A1 – A17, OE, DCS, TCS)
Cin
Cin
110
10
pF
pF
Input/Output Capacitance
Cout
10
pF
This devices on this module contain circuitry
to protect the inputs against damage due to
high static voltages or electric fields; however,
it is advised that normal precautions be taken
to avoid application of any voltage higher than
maximum rated voltages to these high–imped-
ance circuits.
These BiCMOS memory circuits have been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The module is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.
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