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參數(shù)資料
型號(hào): MCM56824AFN35
廠商: MOTOROLA INC
元件分類(lèi): SRAM
英文描述: 8K x 24 Bit Fast Static RAM
中文描述: 8K X 24 APPLICATION SPECIFIC SRAM, 35 ns, PQCC52
封裝: PLASTIC, LCC-52
文件頁(yè)數(shù): 2/10頁(yè)
文件大小: 147K
代理商: MCM56824AFN35
MCM56824A
2
MOTOROLA FAST SRAM
BLOCK DIAGRAM
Q
0
1
INPUT
DATA
CONTROL
(MSB)
(LSB)
V/S
A9
A6
DQ23
MEMORY ARRAY
512 ROWS x
384 COLUMNS
ROW
DECODER
COLUMN DECODER
COLUMN I/O
VCC
A11
A10
A5
A0
A12
X/Y
G
W
E1
E2
DQ0
A12
2 TO 1 MUX
VSS
TRUTH TABLE
E1
E2
G
W
V/S
Mode
Supply
Current
I/O
Status
H
X
X
X
X
Not Selected
ISB
ISB
ICC
ICC
ICC
ICC
ICC
High–Z
X
L
X
X
X
Not Selected
High–Z
L
H
H
H
X
Output Disable
High–Z
L
H
L
H
H
Read Using X/Y
Data Out
L
H
L
H
L
Read Using A12
Data Out
L
H
X
L
H
Write Using X/Y
Data In
L
H
X
L
L
Write Using A12
Data In
NOTE: X=don’t care.
ABSOLUTE MAXIMUM RATINGS
(Voltages Referenced to VSS = 0 V)
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC
Vin, Vout
– 0.5 to + 7.0
V
Voltage Relative to VSS for Any Pin
Except VCC
Output Current (per I/O)
– 0.5 to VCC + 0.5
V
Iout
PD
Tbias
TA
Tstg
±
20
mA
Power Dissipation
1.75
W
Temperature Under Bias
– 10 to + 85
°
C
Operating Temperature
0 to + 70
°
C
Storage Temperature
– 55 to + 125
°
C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
This device contains circuitry to protect
against damage due to high static voltages
or electric fields; however, it is advised that
normal precautions be taken to avoid appli-
cation of any voltage higher than maximum
rated voltages to this high–impedance
circuit.
This CMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equi-
librium has been established. The circuit is
assumed to be in a test socket or mounted
on a printed circuit board with at least 300
LFPM of transverse air flow being
maintained.
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