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參數資料
| 型號： | MCM6227AWJ45R2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 1 Bit Static Random Access Memory |
| 中文描述： | 1M X 1 STANDARD SRAM, 45 ns, PDSO28 |
| 封裝： | 0.400 INCH, SOJ-28 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 210K |
| 代理商： | MCM6227AWJ45R2 |
MCM6227A
3
MOTOROLA FAST SRAM
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Characteristic
Symbol
Typ
Max
Unit
Input Capacitance
All Inputs Except Clocks and D, Q
E and W
Cin
4
5
6
8
pF
Input and Output Capacitance
D, Q
Cin, Cout
5
8
pF
AC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V
±
10%, TA = 0 to + 70
°
C, Unless Otherwise Noted)
0 to 3.0 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Rise/Fall Time
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Timing Measurement Reference Level
. . . . . . . . . . . . . . .
Input Pulse Levels
2 ns
1.5 V
Output Timing Measurement Reference Level
Output Load
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5 V
. . . . . . . . . . . . .
See Figure 1A
READ CYCLE TIMING
(See Notes 1 and 2)
6227A–20
6227A–25
6227A–35
6227A–45
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
Read Cycle Time
tAVAV
tAVQV
tELQV
tAXQX
tELQX
tEHQZ
tELICCH
tEHICCL
20
—
25
—
35
—
45
—
ns
2,3
Address Access Time
—
20
—
25
—
35
—
45
ns
Enable Access Time
—
20
—
25
—
35
—
45
ns
4
Output Hold from Address Change
5
—
5
—
5
—
5
—
ns
Enable Low to Output Active
5
—
5
—
5
—
5
—
ns
5, 6, 7
Enable High to Output High–Z
0
9
0
10
0
12
—
18
ns
5, 6, 7
Power Up Time
0
—
0
—
0
—
0
—
ns
Power Down Time
—
20
—
25
—
35
—
45
ns
NOTES:
1. W is high for read cycle.
2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus con-
tention conditions during read and write cycles.
3. All timings are referenced from the last valid address to the first transitioning address.
4. Addresses valid prior to or coincident with E going low.
5. At any given voltage and temperature, tEHQZ max is less than tELQX min, both for a given device and from device to device.
6. Transition is measured
±
500 mV from steady–state voltage with load of Figure 1B.
7. This parameter is sampled and not 100% tested.
8. Device is continuously selected (E
≤
VIL).
AC TEST LOADS
Figure 1A
Figure 1B
The table of timing values shows either a
minimum or a maximum limit for each param-
eter. Input requirements are specified from
the external system point of view. Thus, ad-
dress setup time is shown as a minimum
since the system must supply at least that
much time (even though most devices do not
require it). On the other hand, responses from
the memory are specified from the device
point of view. Thus, the access time is shown
as a maximum since the device never pro-
vides data later than that time.
TIMING LIMITS
OUTPUT
Z0 = 50
RL = 50
VL = 1.5 V
5 pF
+ 5 V
OUTPUT
255
480
相關PDF資料 |
PDF描述 |
|---|---|
| MCM6227B | Replaced by PTH12000W : |
| MCM6227BWJ20 | 1M x 1 Bit Static Random Access Memory |
| MCM6227BWJ20R2 | 1M x 1 Bit Static Random Access Memory |
| MCM6227BWJ25 | 1M x 1 Bit Static Random Access Memory |
| MCM6227BJ15 | 1M x 1 Bit Static Random Access Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MCM6227B | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1M x 1 Bit Static Random Access Memory |
| MCM6227BJ15 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1M x 1 Bit Static Random Access Memory |
| MCM6227BJ15R2 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1M x 1 Bit Static Random Access Memory |
| MCM6227BJ17 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1M x 1 Bit Static Random Access Memory |
| MCM6227BJ17R2 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1M x 1 Bit Static Random Access Memory |
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