欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: MCM6227BJ20
廠商: MOTOROLA INC
元件分類: DRAM
英文描述: 1M x 1 Bit Static Random Access Memory
中文描述: 1M X 1 STANDARD SRAM, 20 ns, PDSO28
封裝: 0.300 INCH, SOJ-28
文件頁數: 3/8頁
文件大小: 147K
代理商: MCM6227BJ20
MCM6227B
3
MOTOROLA FAST SRAM
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Characteristic
Symbol
Typ
Max
Unit
Input Capacitance
All Inputs Except Clocks and D, Q
E and W
Cin
4
5
6
8
pF
Input and Output Capacitance
D, Q
Cin, Cout
5
8
pF
AC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V
±
10%, TA = 0 to + 70
°
C, Unless Otherwise Noted)
0 to 3.0 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Rise/Fall Time
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Timing Measurement Reference Level
. . . . . . . . . . . . . . .
Input Pulse Levels
2 ns
1.5 V
Output Timing Measurement Reference Level
Output Load
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5 V
. . . . . . . . . . . . .
See Figure 1a
READ CYCLE TIMING
(See Notes 1 and 2)
6227B–15
6227B–17
6227B–20
6227B–25
6227B–35
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
Read Cycle Time
tAVAV
tAVQV
tELQV
tAXQX
15
17
20
25
35
ns
2, 3
Address Access Time
15
17
20
25
35
ns
Enable Access Time
15
17
20
25
35
ns
4
Output Hold from
Address Change
5
5
5
5
5
ns
Enable Low to Output
Active
tELQX
5
5
5
5
5
ns
5, 6, 7
Enable High to Output
High–Z
tEHQZ
6
7
7
8
8
ns
5, 6, 7
NOTES:
1. W is high for read cycle.
2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus con-
tention conditions during read and write cycles.
3. All timings are referenced from the last valid address to the first transitioning address.
4. Addresses valid prior to or coincident with E going low.
5. At any given voltage and temperature, tEHQZ max is less than tELQX min, both for a given device and from device to device.
6. Transition is measured
±
500 mV from steady–state voltage with load of Figure 1b.
7. This parameter is sampled and not 100% tested.
8. Device is continuously selected (E
VIL).
(a)
(b)
The table of timing values shows either a
minimum or a maximum limit for each param-
eter. Input requirements are specified from
the external system point of view. Thus, ad-
dress setup time is shown as a minimum
since the system must supply at least that
much time. On the other hand, responses
from the memory are specified from the de-
vice point of view. Thus, the access time is
shown as a maximum since the device never
provides data later than that time.
TIMING LIMITS
OUTPUT
Z0 = 50
RL = 50
VL = 1.5 V
5 pF
+ 5 V
OUTPUT
255
480
Figure 1. AC Test Loads
相關PDF資料
PDF描述
MCM6227BJ20R2 1M x 1 Bit Static Random Access Memory
MCM6227BJ25 1M x 1 Bit Static Random Access Memory
MCM6227BJ25R2 1M x 1 Bit Static Random Access Memory
MCM6227BJ35 1M x 1 Bit Static Random Access Memory
MCM6227BJ35R2 1M x 1 Bit Static Random Access Memory
相關代理商/技術參數
參數描述
MCM6227BJ20R2 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1M x 1 Bit Static Random Access Memory
MCM6227BJ25 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1M x 1 Bit Static Random Access Memory
MCM6227BJ25R2 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1M x 1 Bit Static Random Access Memory
MCM6227BJ35 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1M x 1 Bit Static Random Access Memory
MCM6227BJ35R2 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1M x 1 Bit Static Random Access Memory
主站蜘蛛池模板: 罗平县| 格尔木市| 政和县| 凯里市| 孟津县| 阿城市| 南平市| 巩留县| 比如县| 策勒县| 微山县| 万山特区| 合山市| 五大连池市| 杨浦区| 西林县| 海伦市| 通许县| 临沧市| 文水县| 布拖县| 澎湖县| 浙江省| 南丰县| 芒康县| 嘉义市| 阿巴嘎旗| 万宁市| 南乐县| 越西县| 景泰县| 哈密市| 临夏县| 筠连县| 微山县| 玉环县| 长白| 吴旗县| 古丈县| 吉林市| 广灵县|