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參數資料
| 型號： | MCM6229BBEJ17R2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | FAN 24VDC 120X38 MS24B3 |
| 中文描述： | 256K X 4 STANDARD SRAM, 17 ns, PDSO28 |
| 封裝： | 0.300 INCH, SOJ-28 |
| 文件頁數： | 6/8頁 |
| 文件大小： | 125K |
| 代理商： | MCM6229BBEJ17R2 |
MCM6229BB
6
MOTOROLA FAST SRAM
WRITE CYCLE 2
(E Controlled, See Notes 1, 2, and 3)
6229BB–15
6229BB–17
6229BB–20
6229BB–25
6229BB–35
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
Write Cycle Time
tAVAV
tAVEL
tAVEH
tELEH,
tELWH
15
—
17
—
20
—
25
—
35
—
ns
4
Address Setup Time
0
—
0
—
0
—
0
—
0
—
ns
Address Valid to End of Write
12
—
14
—
15
—
17
—
20
—
ns
Enable to End of Write
12
—
14
—
15
—
17
—
20
—
ns
5, 6
Write Pulse Width
tWLEH
tDVEH
tEHDX
tEHAX
12
—
14
—
15
—
17
—
20
—
ns
Data Valid to End of Write
7
—
8
—
9
—
10
—
11
—
ns
Data Hold Time
0
—
0
—
0
—
0
—
0
—
ns
Write Recovery Time
NOTES:
1. A write occurs during the overlap of E low and W low.
2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus con-
tention conditions during read and write cycles.
3. If G goes low coincident with or after W goes low, the output will remain in a high–impedance state.
4. All timings are referenced from the last valid address to the first transitioning address.
5. If E goes low coincident with or after W goes low, the output will remain in a high–impedance state.
6. If E goes high coincident with or before W goes high, the output will remain in a high–impedance state.
0
—
0
—
0
—
0
—
0
—
ns
WRITE CYCLE 2
(E Controlled See Notes 1, 2, 3, and 4)
tEHDX
tDVEH
tEHAX
tELWH
tAVEL
tAVEH
DATA VALID
tAVAV
HIGH–Z
A (ADDRESS)
W (WRITE ENABLE)
E (CHIP ENABLE)
Q (DATA OUT)
D (DATA IN)
tELEH
tWLEH
ORDERING INFORMATION
(Order by Full Part Number)
Motorola Memory Prefix
Part Number
Package (XJ = 400 mil SOJ, EJ = 300 mil SOJ)
Full Part Numbers — MCM6229BBXJ15
MCM6229BBXJ15R2
MCM6229BBXJ17R2
MCM6229BBXJ20R2
MCM6229BBXJ25R2
MCM6229BBXJ35R2
MCM6229BBEJ15
MCM6229BBEJ17
MCM6229BBEJ20
MCM6229BBEJ25
MCM6229BBEJ35
MCM6229BBEJ15R2
MCM6229BBEJ17R2
MCM6229BBEJ20R2
MCM6229BBEJ25R2
MCM6229BBEJ35R2
MCM6229BBXJ17
MCM6229BBXJ20
MCM6229BBXJ25
MCM6229BBXJ35
Shipping Method (R2 = Tape and Reel, Blank = Rails)
Speed (15 = 15 ns, 17 = 17 ns, 20 = 20 ns, 25 = 25 ns,
35 = 35 ns)
MCM 6229BB
XX
XX
XX
相關PDF資料 |
PDF描述 |
|---|---|
| MCM6229BBXJ35 | 256K x 4 Bit Static Random Access Memory |
| MCM6229BBXJ35R2 | 256K x 4 Bit Static Random Access Memory |
| MCM6229BBXJ20 | 256K x 4 Bit Static Random Access Memory |
| MCM6229BBXJ20R2 | 256K x 4 Bit Static Random Access Memory |
| MCM6229BBXJ25 | 256K x 4 Bit Static Random Access Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MCM6229BBEJ20 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256K x 4 Bit Static Random Access Memory |
| MCM6229BBEJ20R2 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256K x 4 Bit Static Random Access Memory |
| MCM6229BBEJ25 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256K x 4 Bit Static Random Access Memory |
| MCM6229BBEJ25R2 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256K x 4 Bit Static Random Access Memory |
| MCM6229BBEJ35 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256K x 4 Bit Static Random Access Memory |
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