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參數資料
| 型號： | MCM6229BBEJ25 |
| 廠商： | MOTOROLA INC |
| 元件分類： | SRAM |
| 英文描述： | 256K x 4 Bit Static Random Access Memory |
| 中文描述： | 256K X 4 STANDARD SRAM, 25 ns, PDSO28 |
| 封裝： | 0.300 INCH, SOJ-28 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 125K |
| 代理商： | MCM6229BBEJ25 |
MCM6229BB
3
MOTOROLA FAST SRAM
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Characteristic
Symbol
Typ
Max
Unit
Input Capacitance
All Inputs Except Clocks and DQs
E, G, and W
Cin
Cck
4
5
6
8
pF
I/O Capacitance
DQ
CI/O
5
8
pF
AC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V
±
10%, TA = 0 to + 70
°
C, Unless Otherwise Noted)
0 to 3.0 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Rise/Fall Time
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Timing Measurement Reference Level
. . . . . . . . . . . . . . .
Input Pulse Levels
2 ns
1.5 V
Output Timing Measurement Reference Level
Output Load
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5 V
. . . . . . . . . . . . .
See Figure 1a
READ CYCLE TIMING
(See Notes 1, 2, and 3)
6229BB–15
6229BB–17
6229BB–20
6229BB–25
6229BB–35
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
Read Cycle Time
tAVAV
tAVQV
tELQV
tGLQV
tAXQX
15
—
17
—
20
—
25
—
35
—
ns
3
Address Access Time
—
15
—
17
—
20
—
25
—
35
ns
Enable Access Time
—
15
—
17
—
20
—
25
—
35
ns
4
Output Enable Access Time
—
6
—
7
—
7
—
8
—
8
ns
Output Hold from Address
Change
3
—
3
—
3
—
3
—
3
—
ns
Enable Low to Output Active
tELQX
tGLQX
5
—
5
—
5
—
5
—
5
—
ns
5, 6, 7
Output Enable Low to Output
Active
0
—
0
—
0
—
0
—
0
—
ns
5, 6, 7
Enable High to Output High–Z
tEHQZ
tGHQZ
0
6
0
7
0
7
0
8
0
8
ns
5, 6, 7
Output Enable High to Output
High–Z
0
6
0
7
0
7
0
8
0
8
ns
5, 6, 7
NOTES:
1. W is high for read cycle.
2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus con-
tention conditions during read and write cycles.
3. All timings are referenced from the last valid address to the first transitioning address.
4. Addresses valid prior to or coincident with E going low.
5. At any given voltage and temperature, tEHQZ max is less than tELQX min, and tGHQZ max is less than tGLQX min, both for a given device
and from device to device.
6. Transition is measured
±
500 mV from steady–state voltage with load of Figure 1b.
7. This parameter is sampled and not 100% tested.
8. Device is continuously selected (E
≤
VIL, G
≤
VIL).
OUTPUT
Z0 = 50
RL = 50
VL = 1.5 V
(a)
(b)
5 pF
+5 V
OUTPUT
255
480
The table of timing values shows either a
minimum or a maximum limit for each param-
eter. Input requirements are specified from
the external system point of view. Thus, ad-
dress setup time is shown as a minimum
since the system must supply at least that
much time. On the other hand, responses
from the memory are specified from the de-
vice point of view. Thus, the access time is
shown as a maximum since the device never
provides data later than that time.
TIMING LIMITS
Figure 1. AC Test Loads
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