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參數資料
| 型號： | MCM6229BBEJ35R2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | SRAM |
| 英文描述： | 256K x 4 Bit Static Random Access Memory |
| 中文描述： | 256K X 4 STANDARD SRAM, 35 ns, PDSO28 |
| 封裝： | 0.300 INCH, SOJ-28 |
| 文件頁數： | 5/8頁 |
| 文件大小： | 125K |
| 代理商： | MCM6229BBEJ35R2 |
MCM6229BB
5
MOTOROLA FAST SRAM
WRITE CYCLE 1
(W Controlled, See Notes 1, 2, 3, and 4)
6229BB–15
6229BB–17
6229BB–20
6229BB–25
6229BB–35
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
Write Cycle Time
tAVAV
tAVWL
tAVWH
tWLWH,
tWLEH
15
—
17
—
20
—
25
—
35
—
ns
4
Address Setup Time
0
—
0
—
0
—
0
—
0
—
ns
Address Valid to End of Write
12
—
14
—
15
—
17
—
20
—
ns
Write Pulse Width
12
—
14
—
15
—
17
—
20
—
ns
Data Valid to End of Write
tDVWH
tWHDX
tWLQZ
tWHQX
tWHAX
7
—
8
—
9
—
10
—
11
—
ns
Data Hold TIme
0
—
0
—
0
—
0
—
0
—
ns
Write Low to Data High–Z
—
6
—
7
—
7
—
8
—
8
ns
5, 6, 7
Write High to Output Active
5
—
5
—
5
—
5
—
5
—
ns
5, 6, 7
Write Recovery Time
0
—
0
—
0
—
0
—
0
—
ns
NOTES:
1. A write occurs during the overlap of E low and W low.
2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus con-
tention conditions during read and write cycles.
3. If G goes low coincident with or after W goes low, the output will remain in a high–impedance state.
4. All timings are referenced from the last valid address to the first transitioning address.
5. Transition is measured
±
500 mV from steady–state voltage with load of Figure 1b.
6. This parameter is sampled and not 100% tested.
7. At any given voltage and temperature, tWLQZ max is less than tWHQX min both for a given device and from device to device.
WRITE CYCLE 1
(W Controlled See Notes 1, 2, 3, and 4)
tAVWH
tWLQZ
tWHAX
tDVWH
A (ADDRESS)
E (CHIP ENABLE)
W (WRITE ENABLE)
D (DATA IN)
Q (DATA OUT)
DATA VALID
HIGH–Z
HIGH–Z
tAVAV
tAVWL
tWLEH
tWHDX
tWLWH
tWHQX
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