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參數資料
| 型號： | MCM62Y308J17 |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | Synchronous Line Buffer:8K x 8 Bit Fast Static Dual Ported Memory |
| 中文描述： | 8K X 8 MULTI-PORT SRAM, 17 ns, PDSO32 |
| 封裝： | 0.300 INCH, SOJ-32 |
| 文件頁數： | 4/16頁 |
| 文件大小： | 257K |
| 代理商： | MCM62Y308J17 |
MCM62Y308
4
MOTOROLA FAST SRAM
MAXIMUM RATINGS*
(Voltages Referenced to VSS = 0)
Rating
Symbol
Value
Unit
Power Supply Voltage
VDD
Vin, Vout
Iout
PD
Tbias
– 0.5 to + 7.0
V
Voltage Relative to VSS
Output Current (per I/O)
– 0.5 to VDD + 0.5
±
20
V
mA
Power Dissipation
1.0
W
Temperature Under Bias
– 10 to + 85
°
C
Operating Temperature
TA
Tstg
0 to + 70
°
C
Storage Temperature
– 55 to + 125
°
C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISITICS
(TA = 0 to 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
(Voltages referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage (Operating Voltage Range)
MCM62Y308–17
VDD
4.75
5.0
5.25
V
Input High Voltage
VIH
VIL
2.2
—
VDD + 0.3
0.8
V
Input Low Voltage
– 0.5*
—
V
*VIL (min) = – 3.0 V ac (pulse width
≤
20 ns)
DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VDD)
Output Leakage Current (G = VIH, Vout = 0 to VDD)
AC Supply Current (G = VIH, Iout = 0 mA, All Inputs
≥
VIL = 0.0 V and VIH
≥
3.0,
Cycle Time = 20 ns)
Ilkg(I)
Ilkg(O)
ICCA
±
1.0
μ
A
±
1.0
μ
A
150
mA
AC Standby Current (When Expand ID Bits Do Not Match the Read Address Counter,
Cycle Time = 20 ns)
ISB
100
mA
Output Low Voltage (IOL = + 4.0 mA)
Output High Voltage (IOH = – 4.0 mA)
VOL
VOH
0.4
V
2.4
V
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Characteristic
Symbol
Typ
Max
Unit
Input Capacitance
Cin
Cout
4
6
pF
Output Capacitance (Q0 – Q7, TDO, WRF, RRF)
6
8
pF
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.
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