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參數資料
| 型號： | MCM6323ATS12 |
| 廠商： | MOTOROLA INC |
| 元件分類： | SRAM |
| 英文描述： | 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | TSOP2-44 |
| 文件頁數： | 9/12頁 |
| 文件大小： | 181K |
| 代理商： | MCM6323ATS12 |
MCM6323A
9
MOTOROLA FAST SRAM
WRITE CYCLE 3
(B Controlled, See Notes 1 and 2)
Parameter
Symbol
b l
MCM6323A–10
MCM6323A–12
MCM6323A–15
U i
Unit
Notes
Min
Max
Min
Max
Min
Max
Write Cycle Time
tAVAV
tAVBL
tAVBH
tWLWH,
tWLEH
10
—
12
—
15
—
ns
3
Address Setup Time
0
—
0
—
0
—
ns
Address Valid to End of Write
8
—
9
—
10
—
ns
Write Pulse Width
8
—
9
—
10
—
ns
Byte Pulse Width
tBLWH,
tBLEH,
tBLBH
tDVBH
tBHDX
tWLQZ
tWHQX
tBHAX
8
—
9
—
10
—
ns
Data Valid to End of Write
5
—
6
—
7
—
ns
Data Hold Time
0
—
0
—
0
—
ns
Write Low to Data High–Z
0
4
0
5
0
6
ns
4, 5, 6
Write High to Output Active
3
—
3
—
3
—
ns
4, 5, 6
Write Recovery Time
0
—
0
—
0
—
ns
NOTES:
1. A write occurs during the overlap of E low, W low, and LB and/or UB low.
2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles.
3. All write cycle timings are referenced from the last valid address to the first transitioning address.
4. Transition is measured 200 mV from steady–state voltage.
5. At any given voltage and temperature, tWLQZ max < tWHQX min both for a given device and from device to device.
6. This parameter is sampled and not 100% tested.
WRITE CYCLE 3
(B Controlled)
DATA VALID
tDVBH
tAVBL
tAVBH
tAVAV
tBHAX
tBLWH
tBLBH
tBHDX
tWLQZ
tWHQX
HIGH–Z
HIGH–Z
A (ADDRESS)
W (WRITE ENABLE)
E (CHIP ENABLE)
Q (DATA OUT)
D (DATA IN)
tBLEH
tWLWH
LB, UB (BYTE ENABLE)
tWLEH
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相關代理商/技術參數 |
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| MCM6323ATS12R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 16 Bit 3.3 V Asynchronous Fast Static RAM |
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