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參數資料
| 型號： | MCM6341ZP15 |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 24 Bit Static Random Access Memory |
| 中文描述： | 128K X 24 STANDARD SRAM, 15 ns, PBGA119 |
| 封裝： | PLASTIC, BGA-119 |
| 文件頁數： | 5/10頁 |
| 文件大小： | 124K |
| 代理商： | MCM6341ZP15 |
MCM6341
5
MOTOROLA FAST SRAM
AC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V
±
10%, TA = 0 to + 70
°
C, Unless Otherwise Noted)
(TA = – 40 to + 85
°
C for Industrial Temperature Offering)
Input Pulse Levels
Input Rise/Fall Time
Input Timing Measurement Reference Level
0 to 3.0 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2 ns
1.5 V
. . . . . . . . . . . . . . .
Output Timing Measurement Reference Level
Output Load
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5 V
. . . . . . . . . . . . .
See Figure 1
READ CYCLE TIMING
(See Notes 1, 2, and 3)
Parameter
Symbol
b l
MCM6341–10
MCM6341–11
MCM6341–12
MCM6341–15
U i
Unit
Notes
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
tAVAV
tAVQV
tELQV
tGLQV
tAXQX
tELQX
tGLQX
tEHQZ
tGHQZ
10
—
11
—
12
—
15
—
ns
4
Address Access Time
—
10
—
11
—
12
—
15
ns
Enable Access Time
—
10
—
11
—
12
—
15
ns
5
Output Enable Access Time
—
5
—
6
—
6
—
7
ns
Output Hold from Address Change
3
—
3
—
3
—
3
—
ns
Enable Low to Output Active
3
—
3
—
3
—
3
—
ns
6, 7, 8
Output Enable Low to Output Active
0
—
0
—
0
—
0
—
ns
6, 7, 8
Enable High to Output High–Z
0
5
0
6
0
6
0
7
ns
6, 7, 8
Output Enable High to Output High–Z
0
5
0
6
0
6
0
7
ns
6, 7, 8
NOTES:
1. W is high for read cycle.
2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus
contention conditions during read and write cycles.
3. E1, E2, and E3 are represented by E in this data sheet. E2 is of opposite polarity to E1 and E3.
4. All read cycle timings are referenced from the last valid address to the first transitioning address.
5. Addresses valid prior to or coincident with E going low.
6. At any given voltage and temperature, tEHQZ max
tELQX min, and tGHQZ max
to device.
7. Transition is measured
±
200 mV from steady–state voltage.
8. This parameter is sampled and not 100% tested.
9. Device is continuously selected (E
≤
VIL, G
≤
VIL).
tGLQX min, both for a given device and from device
OUTPUT
Z0 = 50
RL = 50
VL = 1.5 V
Figure 1. AC Test Load
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