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參數(shù)資料
型號: MCM63P631
廠商: Motorola, Inc.
英文描述: 64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM
中文描述: 64K的× 32位流水線BurstRAM同步快速靜態(tài)存儲器
文件頁數(shù): 20/27頁
文件大小: 328K
代理商: MCM63P631
MCM63P636
20
MOTOROLA FAST SRAM
TAP AC OPERATING CONDITIONS AND CHARACTERISTICS
(TA = 0 to 70
°
C, Unless Otherwise Noted)
AC TEST CONDITIONS
Parameter
Value
Unit
Input Timing Reference Level
VDDQ/2
0 to 2.0
V
Input Pulse Levels
V
Input Rise/Fall Time (20 to 80%)
1
V/ns
Output Timing Reference Level
VDDQ/2
V
Output Load (See Figure 4 Unless Otherwise Noted)
TAP CONTROLLER TIMING
Parameter
Symbol
Min
Max
Unit
Notes
TCK Cycle Time
tTHTH
tTH
tTL
tTLQV
tTSRT
tCS
tDVTH
tMVTH
60
ns
TCK Clock High Time
25
ns
TCK Clock Low Time
25
ns
TDO Access Time
1
10
ns
TRST Pulse Width
40
ns
Setup Times
Capture
TDI
TMS
5
5
5
ns
1
Hold Times
Capture
TDI
TMS
tCH
tTHDX
tTHMX
13
14
14
ns
1
NOTE:
1. tCS and tCH define the minimum pauses in RAM I/O transitions to assure accurate pad data capture.
tTHDX
tTLQV
tDVTH
tTLTH
tTHMX
tMVTH
TAP CONTROLLER TIMING DIAGRAM
tTHTH
TEST CLOCK
(TCK)
TEST MODE SELECT
(TMS)
TEST DATA IN
(TDI)
TEST DATA OUT
(TDO)
tTHTL
相關(guān)PDF資料
PDF描述
MCM63P631TQ7 64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P631TQ8 64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P636TQ200 64K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P636TQ200R Replaced by PTH12000W :
MCM63P736 Replaced by PTH12000W :
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