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參數資料
| 型號： | MCM63P631ATQ75R |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | MS/STANDARD CYLINDRICAL MIL-C-5015 SERIES 3102E ENVIRONMENTAL RESISTING BOX MOUNT RECEPTACLES, STRAIGHT BODY STYLE, SOLDER TERMINATION, 18 SHELL SIZE, 18-11 INSERT ARRANGEMENT, RECEPTACLE GENDER, 5 CONTACTS |
| 中文描述： | 64K X 32 CACHE SRAM, 7 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 228K |
| 代理商： | MCM63P631ATQ75R |
MCM63P631A
1
Motorola, Inc. 1997
Product Preview
64K x 32 Bit Pipelined BurstRAM
Synchronous Fast Static RAM
The MCM63P631A is a 2M bit synchronous fast static RAM designed to pro-
vide a burstable, high performance, secondary cache for the 68K Family, Pow-
erPC
, and Pentium
microprocessors. It is organized as 64K words of 32 bits
each. This device integrates input registers, an output register, a 2–bit address
counter, and high speed SRAM onto a single monolithic circuit for reduced parts
count in cache data RAM applications. Synchronous design allows precise cycle
control with the use of an external clock (K). CMOS circuitry reduces the overall
power consumption of the integrated functions for greater reliability.
Addresses (SA), data inputs (DQx), and all control signals except output
enable (G), sleep mode (ZZ), and Linear Burst Order (LBO) are clock (K) con-
trolled through positive–edge–triggered noninverting registers.
Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst
addresses can be generated internally by the MCM63P631A (burst sequence
operates in linear or interleaved mode dependent upon state of LBO) and con-
trolled by the burst address advance (ADV) input pin.
Write cycles are internally self–timed and are initiated by the rising edge of the
clock (K) input. This feature eliminates complex off–chip write pulse generation
and provides increased timing flexibility for incoming signals.
Synchronous byte write (SBx), synchronous global write (SGW), and synchro-
nous write enable SW are provided to allow writes to either individual bytes or to
all bytes. The four bytes are designated as “a”, “b”, “c”, and “d”. SBa controls
DQa, SBb controls DQb, etc. Individual bytes are written if the selected byte
writes SBx are asserted with SW. All bytes are written if either SGW is asserted
or if all SBx and SW are asserted.
For read cycles, pipelined SRAMs output data is temporarily stored by an
edge–triggered output register and then released to the output buffers at the next
rising edge of clock (K).
The MCM63P631A operates from a 3.3 V power supply, all inputs and outputs
are LVTTL compatible.
MCM63P631A–117 = 4.5 ns access / 8.5 ns cycle (117 MHz)
MCM63P631A–100 = 4.5 ns access / 10 ns cycle (100 MHz)
MCM63P631A–75 = 7 ns access / 13.3 ns cycle (75 MHz)
MCM63P631A–66 = 8 ns access / 15 ns cycle (66 MHz)
Single 3.3 V + 10%, – 5% Power Supply
ADSP, ADSC, and ADV Burst Control Pins
Selectable Burst Sequencing Order (Linear/Interleaved)
Internally Self–Timed Write Cycle
Byte Write and Global Write Control
Sleep Mode (ZZ)
PB1 Version 2.0 Compatible
Single–Cycle Deselect Timing
JEDEC Standard 100–Pin TQFP Package
The PowerPC name is a trademark of IBM Corp., used under license therefrom.
Pentium is a trademark of Intel Corp.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Order this document
by MCM63P631A/D
SEMICONDUCTOR TECHNICAL DATA
MCM63P631A
TQ PACKAGE
TQFP
CASE 983A–01
9/30/97
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MCM63P631TQ117 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P631TQ117R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P631TQ4.5 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P631TQ4.5R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P631TQ7 | 制造商:MOT 功能描述:* |
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