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參數(shù)資料
| 型號： | MCM63P636TQ200R |
| 廠商： | Motorola, Inc. |
| 英文描述： | Replaced by PTH12000W : |
| 中文描述： | 64K的× 36位流水線BurstRAM同步快速靜態(tài)存儲器 |
| 文件頁數(shù)： | 9/27頁 |
| 文件大小： | 328K |
| 代理商： | MCM63P636TQ200R |
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MCM63P636
9
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V
±
200 mV, TA = 0 to 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS AND DC CHARACTERISTICS
(Voltage Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VDD
VDDI
VDDQ
VIL
VIH
Ilkg(I)
Ilkg(O)
VOL
VOH
3.1
3.3
3.5
V
Input Supply Voltage
1.8
—
2.2
V
I/O Supply Voltage
1.8
—
2.2
V
Input Low Voltage (VDDI = VDDQ)
Input High Voltage (VDDI = VDDQ)
Input Leakage Current (0 V
≤
Vin
≤
VDD)
Output Leakage Current (0 V
≤
Vin
≤
VDDQ)
Output Low Voltage (IOL = 1 mA)
Output High Voltage (IOL = – 1 mA)
– 0.5
—
0.35 x VDDI
VDDI + 0.5
±
1
V
0.65 x VDDI
—
—
V
—
μ
A
—
—
±
1
μ
A
– 0.5
—
0.4
V
VDDQ – 0.4
—
VDDQ + 0.5
V
VIH
20% tKHKH
VSS
VSS – 0.5 V
Figure 3. Undershoot Voltage
VSS – 0.25 V
SUPPLY CURRENTS
Parameter
Symbol
Min
Max
Unit
Notes
AC Supply Current (Device Selected, All Outputs Open,
Freq = Max, VDD = Max)
IDDA – 250
IDDA – 225
IDDA – 200
—
TBD
mA
1, 2,
3, 4
Input and I/O Supply Current – Desktop (All 40 Outputs Toggling,
Freq = Max, VDDI = Max, VDDQ = Max, VDDI = VDDQ, Cdt = 24 pF)
IDDQ – 250
IDDQ – 225
IDDQ – 200
—
311
280
249
mA
2, 5
Static Standby Supply Current (Device Deselected, Freq = Max,
VDD = Max, ADS
≥
(VDDI – 0.2 V), W Static
≤
(VSS + 0.2 V)
or
≥
(VDDI – 0.2 V), SA and DQx Inputs Static
≤
(VSS + 0.2 V),
Outputs Disabled)
ISB1 – 250
ISB1 – 225
ISB1 – 200
—
63
57
50
mA
1, 2, 4
Idle Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, ADS
≥
(VDDI – 0.2 V), W Static
≤
(VSS + 0.2 V)
or
≥
(VDDI – 0.2 V), SA and DQx Inputs Static
≤
(VSS + 0.2 V),
Outputs Disabled)
ISB2A
—
TBD
mA
1, 3, 4
Idle Input Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, ADS
≥
(VDDI – 0.2 V), W Static
≤
(VSS + 0.2 V)
or
≥
(VDDI – 0.2 V), SA and DQx Inputs Static
≤
(VSS + 0.2 V),
Outputs Disabled)
ISB2B
—
TBD
mA
1, 3, 5
NOTES:
1. Device is selected and deselected as defined by the Truth Table.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. Includes supply current for VDD only.
5. Includes supply currents for VDDI and VDDQ only.
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| MCM63P736 | Replaced by PTH12000W : |
| MCM63P736TQ100R | Replaced by PTH12000W : |
| MCM63P736TQ133R | 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736TQ66 | 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCM63P636ZP200 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P636ZP200R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P636ZP225 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P636ZP225R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P636ZP250 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
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