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參數(shù)資料
| 型號： | MCM63P818TQ133R |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| 中文描述： | 256K X 18 CACHE SRAM, 4 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 6/27頁 |
| 文件大?。?/td> | 328K |
| 代理商： | MCM63P818TQ133R |
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MCM63P636
6
MOTOROLA FAST SRAM
TRUTH TABLE
(See Notes 1 and 2)
K
E
ADS
W
Next Cycle (n)
Input Command Code
DQ (n + 1)
DQ (n+2)
L – H
False
0
X
Deselect
D
High–Z
—
L – H
True
0
0
Load Address, Begin Write
BW
Data In
—
L – H
True
0
1
Load Address, Begin Read
BR
—
Data Out
L – H
X
1
0
Continue Write
CW
Data In
—
L – H
X
1
1
Continue Read
Mask Write
CR
MW
—
High–Z
Data Out
—
NOTES:
1. X = don’t care, 1 = logic high, 0 = logic low.
2. E = true if SE1 and SE3 = 0, and SE2 = 1.
BURST ADDRESS TABLE
1st Address (External)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
2nd Address (Internal)
X . . . X01
X . . . X00
X . . . X11
X . . . X10
3rd Address (Internal)
X . . . X10
X . . . X11
X . . . X00
X . . . X01
4th Address (Internal)
X . . . X11
X . . . X10
X . . . X01
X . . . X00
DESELECT
NEW
READ*
Figure 1. Functional State Diagram
BURST
READ 1*
BURST
READ 2*
BURST
READ 3*
NEW
WRITE*
BURST
WRITE 1*
BURST
WRITE 2*
BURST
WRITE 3*
MASKED
WRITE 1*
MASKED
WRITE 2*
MASKED
WRITE 3*
D, CW, CR – MW
BR
BW
CR
CR
CR
BR
BW
BW
D, CW, MW
CW
CW
CW
BR
MW
MW
MW
MW
MW
BR
BW
D, CW, MW
D, CW, MW
* Command code inputs not shown from this state are not valid.
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相關代理商/技術參數(shù) |
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| MCM63P818ZP100R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P818ZP133 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
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