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參數資料
型號: MCM63Z818TQ100R
廠商: MOTOROLA INC
元件分類: SRAM
英文描述: 128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM
中文描述: 256K X 18 ZBT SRAM, 5 ns, PQFP100
封裝: TQFP-100
文件頁數: 9/27頁
文件大小: 328K
代理商: MCM63Z818TQ100R
MCM63P636
9
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V
±
200 mV, TA = 0 to 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS AND DC CHARACTERISTICS
(Voltage Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VDD
VDDI
VDDQ
VIL
VIH
Ilkg(I)
Ilkg(O)
VOL
VOH
3.1
3.3
3.5
V
Input Supply Voltage
1.8
2.2
V
I/O Supply Voltage
1.8
2.2
V
Input Low Voltage (VDDI = VDDQ)
Input High Voltage (VDDI = VDDQ)
Input Leakage Current (0 V
Vin
VDD)
Output Leakage Current (0 V
Vin
VDDQ)
Output Low Voltage (IOL = 1 mA)
Output High Voltage (IOL = – 1 mA)
– 0.5
0.35 x VDDI
VDDI + 0.5
±
1
V
0.65 x VDDI
V
μ
A
±
1
μ
A
– 0.5
0.4
V
VDDQ – 0.4
VDDQ + 0.5
V
VIH
20% tKHKH
VSS
VSS – 0.5 V
Figure 3. Undershoot Voltage
VSS – 0.25 V
SUPPLY CURRENTS
Parameter
Symbol
Min
Max
Unit
Notes
AC Supply Current (Device Selected, All Outputs Open,
Freq = Max, VDD = Max)
IDDA – 250
IDDA – 225
IDDA – 200
TBD
mA
1, 2,
3, 4
Input and I/O Supply Current – Desktop (All 40 Outputs Toggling,
Freq = Max, VDDI = Max, VDDQ = Max, VDDI = VDDQ, Cdt = 24 pF)
IDDQ – 250
IDDQ – 225
IDDQ – 200
311
280
249
mA
2, 5
Static Standby Supply Current (Device Deselected, Freq = Max,
VDD = Max, ADS
(VDDI – 0.2 V), W Static
(VSS + 0.2 V)
or
(VDDI – 0.2 V), SA and DQx Inputs Static
(VSS + 0.2 V),
Outputs Disabled)
ISB1 – 250
ISB1 – 225
ISB1 – 200
63
57
50
mA
1, 2, 4
Idle Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, ADS
(VDDI – 0.2 V), W Static
(VSS + 0.2 V)
or
(VDDI – 0.2 V), SA and DQx Inputs Static
(VSS + 0.2 V),
Outputs Disabled)
ISB2A
TBD
mA
1, 3, 4
Idle Input Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, ADS
(VDDI – 0.2 V), W Static
(VSS + 0.2 V)
or
(VDDI – 0.2 V), SA and DQx Inputs Static
(VSS + 0.2 V),
Outputs Disabled)
ISB2B
TBD
mA
1, 3, 5
NOTES:
1. Device is selected and deselected as defined by the Truth Table.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. Includes supply current for VDD only.
5. Includes supply currents for VDDI and VDDQ only.
相關PDF資料
PDF描述
MCM63Z818TQ133 128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM
MCM63Z818TQ133R 128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM
MCM63Z819TQ11 128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM
MCM63Z819TQ11R 128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM
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相關代理商/技術參數
參數描述
MCM63Z818TQ133 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM
MCM63Z818TQ133R 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM
MCM63Z819TQ11 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM
MCM63Z819TQ11R 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM
MCM63Z819TQ15 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM
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