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參數(shù)資料
| 型號(hào)： | MCM6946TS12 |
| 廠商： | MOTOROLA INC |
| 元件分類： | SRAM |
| 英文描述： | 512K x 9 Bit Fast Static Random Access Memory |
| 中文描述： | 512K X 8 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | TSOP2-44 |
| 文件頁(yè)數(shù)： | 9/11頁(yè) |
| 文件大小： | 172K |
| 代理商： | MCM6946TS12 |
MCM6946
9
MOTOROLA FAST SRAM
WRITE CYCLE 2
(E Controlled; See Notes 1, 2, and 3)
Parameter
Symbol
b l
MCM6946–8
MCM6946–10
MCM6946–12
MCM6946–15
U i
Unit
Notes
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
tAVAV
tAVEL
tAVEH
tAVEH
tELEH,
tELWH
8
—
10
—
12
—
15
—
ns
4
Address Setup Time
0
—
0
—
0
—
0
—
ns
Address Valid to End of Write
7
—
9
—
10
—
12
—
ns
Address Valid to End of Write (G High)
7
—
8
—
9
—
10
—
ns
Enable Pulse Width
8
—
9
—
10
—
12
—
ns
5, 6
Enable Pulse Width (G High)
tELEH,
tELWH
7
—
8
—
9
—
10
—
ns
5, 6
Data Valid to End of Write
tDVEH
tEHDX
tEHAX
5
—
5
—
6
—
7
—
ns
Data Hold Time
0
—
0
—
0
—
0
—
ns
Write Recovery Time
0
—
0
—
0
—
0
—
ns
NOTES:
1. A write occurs during the overlap of E low and W low.
2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus
contention conditions during read and write cycles.
3. If G goes low coincident with or after W goes low, the output will remain in a high–impedance state.
4. All write cycle timing is referenced from the last valid address to the first transitioning address.
5. If E goes low coincident with or after W goes low, the output will remain in a high–impedance condition.
6. If E goes high coincident with or before W goes high, the output will remain in a high–impedance condition.
DATA VALID
HIGH–Z
tAVAV
tAVEH
tAVEL
tELWH
tEHAX
tDVEH
tEHDX
A (ADDRESS)
E (CHIP ENABLE)
W (WRITE ENABLE)
D (DATA IN)
Q (DATA OUT)
tELEH
WRITE CYCLE 2
(E Controlled; See Notes 1, 2, and 3)
Motorola Memory Prefix
Part Number
Package (YJ = 400 mil SOJ, TS = 44–Lead
TSOP Type II)
Shipping Method (R = Tape and Reel, Blank = Rails)
Speed (8 = 8 ns, 10 = 10 ns, 12 = 12 ns,
15 = 15 ns)
MCM 6946
XX XX XX
ORDERING INFORMATION
(Order by Full Part Number)
Full Part Numbers — MCM6946YJ8
MCM6946YJ10
MCM6946YJ10R
MCM6946TS10
MCM6946TS10R
MCM6946YJ12
MCM6946YJ12R
MCM6946TS12
MCM6946TS12R
MCM6946YJ15
MCM6946YJ15R
MCM6946TS15
MCM6946TS15R
MCM6946YJ8R
MCM6946TS8
MCM6946TS8R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCM6946TS12R | 512K x 9 Bit Fast Static Random Access Memory |
| MCM6946TS15 | 512K x 9 Bit Fast Static Random Access Memory |
| MCM6949YJ12 | 1M x 4 Bit Static Random Access Memory |
| MCM6949YJ8R | 1M x 4 Bit Static Random Access Memory |
| MCM6949YJ10 | 1M x 4 Bit Static Random Access Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCM6946TS12R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:512K x 9 Bit Fast Static Random Access Memory |
| MCM6946TS15 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:512K x 9 Bit Fast Static Random Access Memory |
| MCM6946TS15R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:512K x 9 Bit Fast Static Random Access Memory |
| MCM6946TS8 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:512K x 9 Bit Fast Static Random Access Memory |
| MCM6946TS8R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:512K x 9 Bit Fast Static Random Access Memory |
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