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參數資料
| 型號： | MCM6946TS8 |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 9 Bit Fast Static Random Access Memory |
| 中文描述： | 512K X 8 STANDARD SRAM, 8 ns, PDSO44 |
| 封裝： | TSOP2-44 |
| 文件頁數： | 5/11頁 |
| 文件大小： | 172K |
| 代理商： | MCM6946TS8 |
MCM6946
5
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 3.3 V – 5%, + 10%, TA = 0 to + 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
VIH
VIL
3.135
3.3
3.6
V
Input High Voltage
2.2
—
VCC + 0.3**
0.8
V
Input Low Voltage
– 0.5
*
—
V
*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width
≤
2.0 ns).
**VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width
≤
2.0 ns).
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Output Leakage Current (E = VIH, Vout = 0 to VCC)
Output Low Voltage (IOL = + 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
Ilkg(I)
Ilkg(O)
VOL
VOH
—
±
1.0
μ
A
—
±
1.0
μ
A
—
0.4
V
2.4
—
V
POWER SUPPLY CURRENTS
Parameter
Symbol
0 to 70
°
C
Unit
AC Active Supply Current
(Iout = 0 mA, VCC = Max)
MCM6946–8: tAVAV = 8 ns
MCM6946–10: tAVAV = 10 ns
MCM6946–12: tAVAV = 12 ns
MCM6946–15: tAVAV = 15 ns
MCM6946–8: tAVAV = 8 ns
MCM6946–10: tAVAV = 10 ns
MCM6946–12: tAVAV = 12 ns
MCM6946–15: tAVAV = 15 ns
ICC
195
185
180
175
mA
AC Standby Current (VCC = Max, E = VIH,
No Other Restrictions on Other Inputs)
ISB1
55
50
50
45
mA
CMOS Standby Current (E
≥
VCC – 0.2 V, Vin
≤
VSS + 0.2 V or
≥
VCC – 0.2 V)
(VCC = Max, f = 0 MHz)
ISB2
20
mA
CAPACITANCE
(f = 1.0 MHz, dV = 3.3 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Typ
Max
Unit
Input Capacitance
All Inputs Except Clocks and DQs
E, G, W
Cin
Cck
4
5
6
8
pF
Input/Output Capacitance
DQ
CI/O
5
8
pF
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相關代理商/技術參數 |
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