欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: MCM69F618CTQ8.5R
廠商: MOTOROLA INC
元件分類: SRAM
英文描述: 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
中文描述: 64K X 18 CACHE SRAM, 8.5 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 6/12頁
文件大小: 203K
代理商: MCM69F618CTQ8.5R
MCM69F618C
6
MOTOROLA FAST SRAM
ABSOLUTE MAXIMUM RATINGS
(See Note 1)
Rating
Symbol
Value
Unit
Power Supply Voltage
VDD
Vin, Vout
– 0.5 to + 4.6
V
Voltage Relative to VSS for Any
Pin Except VDD
– 0.5 to 6.0
V
Output Current (per I/O)
Iout
PD
Tbias
Tstg
±
20
mA
Package Power Dissipation (See Note 2)
1.6
W
Temperature Under Bias
– 10 to 85
°
C
Storage Temperature
– 55 to 125
°
C
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER–
ATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
2. Power dissipation capability is dependent upon package characteristics and use
environment. See Package Thermal Characteristics.
PACKAGE THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Notes
Thermal Resistance Junction to Ambient (@ 200 lfm)
Single–Layer Board
Four–Layer Board
R
θ
JA
40
25
°
C/W
1, 2
Thermal Resistance Junction to Board (Bottom)
R
θ
JB
R
θ
JC
17
°
C/W
1, 3
Thermal Resistance Junction to Case (Top)
9
°
C/W
1, 4
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, board population, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method
1012.1).
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.
相關(guān)PDF資料
PDF描述
MCM69F618C 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F618CTQ10 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F618CTQ10R 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F618CTQ12 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F618CTQ12R 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCM69F618CTQ9 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F618CTQ9R 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F735 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F735ZP6 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F735ZP6.5 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
主站蜘蛛池模板: 山东省| 黎川县| 罗江县| 凤冈县| 扎兰屯市| 六枝特区| 威宁| 河间市| 石狮市| 崇左市| 百色市| 化州市| 潮安县| 来凤县| 眉山市| 奉节县| 西平县| 北票市| 大荔县| 吴川市| 化德县| 册亨县| 宜兴市| 镇远县| 潞城市| 龙里县| 凤阳县| 陇南市| 建湖县| 漳平市| 石林| 隆林| 桐乡市| 美姑县| 宜宾县| 成武县| 巨野县| 昌图县| 泉州市| 阿克苏市| 汽车|