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參數(shù)資料
| 型號： | MCM69P618CTQ7R |
| 廠商： | MOTOROLA INC |
| 元件分類： | SRAM |
| 英文描述： | 64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| 中文描述： | 64K X 18 CACHE SRAM, 7 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 205K |
| 代理商： | MCM69P618CTQ7R |
MCM69P618C
1
MOTOROLA FAST SRAM
Motorola, Inc. 1998
64K x 18 Bit Pipelined BurstRAM
Synchronous Fast Static RAM
The MCM69P618C is a 1M–bit synchronous fast static RAM designed to pro-
vide a burstable, high performance, secondary cache for the 68K Family,
PowerPC
, 486, i960
, and Pentium
microprocessors. It is organized as 64K
words of 18 bits each. This device integrates input registers, an output register,
a 2–bit address counter, and high speed SRAM onto a single monolithic circuit
for reduced parts count in cache data RAM applications. Synchronous design
allows precise cycle control with the use of an external clock (K). BiCMOS cir-
cuitry reduces the overall power consumption of the integrated functions for
greater reliability.
Addresses (SA), data inputs (DQx), and all control signals except output
enable (G) and Linear Burst Order (LBO) are clock (K) controlled through
positive–edge–triggered noninverting registers.
Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst
addresses can be generated internally by the MCM69P618C (burst sequence
operates in linear or interleaved mode dependent upon the state of LBO) and
controlled by the burst address advance (ADV) input pin.
Write cycles are internally self–timed and initiated by the rising edge of the
clock (K) input. This feature eliminates complex off–chip write pulse generation
and provides increased timing flexibility for incoming signals.
Synchronous byte write (SBx), synchronous global write (SGW), and syn-
chronous write enable SW are provided to allow writes to either individual bytes
or to both bytes. The two bytes are designated as “a” and “b”. SBa controls DQa
and SBb controls DQb. Individual bytes are written if the selected byte writes SBx
are asserted with SW. Both bytes are written if either SGW is asserted or if both
SBx and SW are asserted.
For read cycles, pipelined SRAMs output data is temporarily stored by an
edge–triggered output register and then released to the output buffers at the next
rising edge of clock (K).
The MCM69P618C operates from a single 3.3 V power supply and all inputs
and outputs are LVTTL compatible and 5 V tolerant.
MCM69P618C–4 = 4 ns Access / 7.5 ns Cycle
MCM69P618C–4.5 = 4.5 ns Access / 8 ns Cycle
MCM69P618C–5 = 5 ns Access / 10 ns Cycle
MCM69P618C–6 = 6 ns Access / 12 ns Cycle
MCM69P618C–7 = 7 ns Access / 13.3 ns Cycle
Single 3.3 V + 10%, – 5% Power Supply
ADSP, ADSC, and ADV Burst Control Pins
Selectable Burst Sequencing Order (Linear/Interleaved)
Internally Self–Timed Write Cycle
Byte Write and Global Write Control
Single–Cycle Deselect Timing
5 V Tolerant on all Pins (Inputs and I/Os)
100–Pin TQFP Package
The PowerPC name is a trademark of IBM Corp., used under license therefrom.
i960 and Pentium are trademarks of Intel Corp.
Order this document
by MCM69P618C/D
SEMICONDUCTOR TECHNICAL DATA
MCM69P618C
TQ PACKAGE
TQFP
CASE 983A–01
REV 2
2/16/98
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| MCM69P618C | 64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
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| MCM69P735 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM69P735ZP2.5 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM69P735ZP2.5R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM69P735ZP3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM69P735ZP3.5 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
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