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參數(shù)資料
| 型號(hào)： | MCR103 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon Controlled Rectifiers |
| 中文描述： | 0.8 A, 60 V, SCR, TO-226AA |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 79K |
| 代理商： | MCR103 |
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
Reverse Blocking Triode Thyristors
Annular PNPN devices designed for low cost, high volume consumer applications
such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors,
and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA
package which is readily adaptable for use in automatic insertion equipment.
Sensitive Gate Trigger Current — 200
μ
A Maximum
Low Reverse and Forward Blocking Current — 100
μ
A Maximum, TC = 85
°
C
Low Holding Current — 5 mA Maximum
Passivated Surface for Reliability and Uniformity
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(2)
(TC = + 85
°
C, RGK = 1 k
)
MCR102
MCR103
VDRM
VRRM
30
60
Volts
Forward Current RMS (See Figures 1 & 2)
(All Conduction Angles)
IT(RMS)
0.8
Amps
Peak Forward Surge Current, TA = 25
°
C
(1/2 Cycle, Sine Wave, 60 Hz)
ITSM
10
Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I2t
0.415
A2s
Peak Gate Power — Forward, TA = 25
°
C
Average Gate Power — Forward, TA = 25
°
C
Peak Gate Current — Forward, TA = 25
°
C
(300
μ
s, 120 PPS)
PGM
PGF(AV)
IGFM
0.1
Watt
0.01
Watt
1
Amp
Peak Gate Voltage — Reverse
VGRM
TJ
Tstg
—
4
Volts
Operating Junction Temperature Range @ Rated VRRM and VDRM
Storage Temperature Range
–40 to +85
°
C
–40 to +150
°
C
Lead Solder Temperature
(
1/16 from case, 10 s max)
+ 230
°
C
1. Temperature reference point for all case temperature is center of flat portion of package. (TC = +85
°
C unless otherwise noted.)
2. VDRM and VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate
voltage but positive gate voltage shall not be applied concurrently with a negative potential on the anode. When checking forward or reverse
blocking capability, thyristor devices should not be tested with a constant current source in a manner that the voltage applied exceeds the
rated blocking voltage.
Order this document
by MCR102/D
SEMICONDUCTOR TECHNICAL DATA
A
SCRs
0.8 AMPERES RMS
30 and 60 VOLTS
CASE 29-04
(TO-226AA)
STYLE 10
K
G
A
KG
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