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參數資料
| 型號： | MCR72 |
| 廠商： | Motorola, Inc. |
| 英文描述： | Silicon Controlled Rectifiers |
| 中文描述： | 可控硅整流器 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MCR72 |
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
Reverse Blocking Triode Thyristors
. . . designed for industrial and consumer applications such as temperature, light and
speed control; process and remote controls; warning systems; capacitive discharge
circuits and MPU interface.
Center Gate Geometry for Uniform Current Density
All Diffused and Glass-Passivated Junctions for Parameter Uniformity and
Stability
Small, Rugged Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Low Trigger Currents, 200
μ
A Maximum for Direct Driving from Integrated Circuits
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = – 40 to 110
°
C,
1/2 Sine Wave, RGK = 1k
)
MCR72-2
MCR72-3
MCR72-4
MCR72-6
MCR72-8
MCR72-10
VDRM
or
VRRM
50
100
200
400
600
800
Volts
On-State RMS Current (TC = 83
°
C)
Peak Non-repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = –40 to 110
°
C)
IT(RMS)
ITSM
8
Amps
100
Amps
Circuit Fusing (t = 8.3 ms)
I2t
40
A2s
Peak Gate Voltage (t
10
μ
s)
VGM
IGM
PGM
PG(AV)
TJ
±
5
Volts
Peak Gate Current (t
10
μ
s)
1
Amp
Peak Gate Power (t
10
μ
s)
5
Watts
Average Gate Power
0.75
Watts
Operating Junction Temperature Range
–40 to +110
°
C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage;
however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
(cont.)
Order this document
by MCR72/D
SEMICONDUCTOR TECHNICAL DATA
SCRs
8 AMPERES RMS
50 thru 800 VOLTS
CASE 221A-04
(TO-220AB)
STYLE 3
C
G
A
相關PDF資料 |
PDF描述 |
|---|---|
| MCR72-3 | CONTACT |
| MCR72-6 | CONTACT |
| MCR72-8 | CONNECTEUR |
| MCR8DCM | Silicon Controlled Rectifiers |
| MCR8DCN | Silicon Controlled Rectifiers |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MCR72_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| MCR72-002 | 制造商:Motorola Inc 功能描述: |
| MCR72-003 | 功能描述:SCR 100V 8A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR72-006 | 功能描述:SCR 400V 8A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR72-008 | 功能描述:SCR 600V 8A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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