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參數資料
型號: MCR8DSM
廠商: MOTOROLA INC
元件分類: 晶閘管
英文描述: Silicon Controlled Rectifiers
中文描述: 8 A, 600 V, SCR
封裝: CASE 369A-13, DPAK-3
文件頁數: 1/6頁
文件大小: 127K
代理商: MCR8DSM
1
Motorola Thyristor Device Data
Motorola, Inc. 1997
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Available in Two Package Styles
Surface Mount Lead Form — Case 369A
Miniature Plastic Package — Straight Leads — Case 369
ORDERING INFORMATION
To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MCR8DSN
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MCR8DSNT4
To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MCR8DSN–1
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off–State Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = –40 to 110
°
C, RGK = 1.0 K )
MCR8DSM
MCR8DSN
VDRM
VRRM
600
800
Volts
On–State RMS Current
(All Conduction Angles; TC = 90
°
C)
IT(RMS)
8.0
Amps
Average On–State Current (All Conduction Angles; TC = 90
°
C)
Peak Non–Repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 110
°
C)
IT(AV)
ITSM
5.1
90
Circuit Fusing Consideration (t = 8.3 msec)
I2t
34
A2sec
Peak Gate Power
(Pulse Width
10 sec, TC = 90
°
C)
PGM
5.0
Watts
Average Gate Power
(t = 8.3 msec, TC = 90
°
C)
PG(AV)
0.5
Peak Gate Current (Pulse Width
10
sec, TC = 90
°
C)
Operating Junction Temperature Range
IGM
TJ
Tstg
2.0
Amps
–40 to 110
°
C
Storage Temperature Range
–40 to 150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient (2)
RJC
RJA
RJA
TL
2.2
88
80
°
C/W
Maximum Lead Temperature for Soldering Purposes (3)
260
°
C
(1) VDRM for all types can be applied on a continuous basis. Ratings apply for negative gate voltage or RGK = 1.0 K ; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that
the voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8
from case for 10 seconds.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MCR8DSM/D
SEMICONDUCTOR TECHNICAL DATA
SCRs
8.0 AMPERES RMS
600 thru 800 VOLTS
CASE 369A–13
STYLE 4
A
K
G
A
G
A
K
Motorola Preferred Devices
相關PDF資料
PDF描述
MCR8DSN Silicon Controlled Rectifiers
MCR8S Silicon Controlled Rectifiers
MCR8 SCRs 8 AMPERES RMS 400 thru 800 VOLTS
MCT1413B High Voltage, High Current Darlington Transistor Array
MCT1413BP High Voltage, High Current Darlington Transistor Array
相關代理商/技術參數
參數描述
MCR8DSMT4 功能描述:SCR 600V 8A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR8DSMT4G 功能描述:SCR 600V 8A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR8DSMT4G 制造商:ON Semiconductor 功能描述:SCR THYRISTOR
MCR8DSN 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8DSNT4 功能描述:SCR 800V 8A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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