- 您現在的位置：買賣IC網 > PDF目錄380480 > MDD312-12N1 (IXYS CORP) High Power Diode Modules PDF資料下載
參數資料
| 型號： | MDD312-12N1 |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | High Power Diode Modules |
| 中文描述： | 310 A, 1200 V, SILICON, RECTIFIER DIODE |
| 文件頁數： | 1/3頁 |
| 文件大小： | 81K |
| 代理商： | MDD312-12N1 |
2004 IXYS All rights reserved
1 - 3
MDD 312
4
IXYS reserves the right to change limits, test conditions and dimensions.
V
RSM
V
DSM
V
V
RRM
V
DRM
V
Type
1300
1500
1700
1900
2100
2300
1200
1400
1600
1800
2000
2200
MDD 312-12N1
MDD 312-14N1
MDD 312-16N1
MDD 312-18N1
MDD 312-20N1
MDD 312-22N1
I
FRMS
= 2x520 A
I
FAVM
= 2x310 A
V
RRM
= 1200-2200 V
Features
International standard package
Direct copper bonded Al
2
O
3
-ceramic
with copper base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered E 72873
Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
Advantages
Simple mounting
Improved temperature and power cycling
Reduced protection circuits
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
I
FSM
T
VJ
= T
T
C
= 100
°
C; 180
°
sine
T
VJ
= 45
°
C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
= 45
°
C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
520
310
A
A
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
10500
11200
A
A
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
9200
9800
A
A
∫
i
2
dt
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
551000
527000
A
2
s
A
2
s
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
423 000
403 000
A
2
s
A
2
s
°
C
°
C
°
C
T
VJ
T
VJM
T
stg
V
ISOL
-40...+150
150
-40...+125
50/60 Hz, RMS
I
ISOL
≤
1 mA
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
t = 1 min
t = 1 s
3000
3600
V~
V~
M
d
4.5-7/40-62 Nm/lb.in.
11-13/97-115 Nm/lb.in.
750
Weight
g
Symbol
Conditions
Characteristic Values
I
RRM
V
F
V
T0
r
T
R
thJC
T
VJ
I
F
= 600 A; T
VJ
= 25
°
C
For power-loss calculations only
T
VJ
= T
VJM
per diode; DC current
per module
per diode; DC current
per module
T
VJ
= 125
°
C; I
F
= 400 A; -di/dt = 50 A/
μ
s
= T
VJM
; V
R
= V
RRM
30
mA
1.32
V
0.8
0.6
V
m
0.12
0.06
0.16
0.08
K/W
K/W
K/W
K/W
μ
C
A
R
thJK
Q
S
I
RM
d
S
d
A
a
700
260
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s
2
High Power
Diode Modules
1
2
3
Dimensions in mm (1 mm = 0.0394")
M8x20
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
3
1
2
相關PDF資料 |
PDF描述 |
|---|---|
| MDD312-14N1 | High Power Diode Modules |
| MDD312-20N1 | High Power Diode Modules |
| MDD312-22N1 | High Power Diode Modules |
| MDD44-12N1B | DIODE MODULES |
| MDD44-14N1B | DIODE MODULES |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MDD312-14N1 | 功能描述:分立半導體模塊 312 Amps 1400V RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| MDD312-16N1 | 功能描述:分立半導體模塊 312 Amps 1600V RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| MDD312-18N1 | 功能描述:分立半導體模塊 312 Amps 1800V RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| MDD312-20N1 | 功能描述:分立半導體模塊 312 Amps 2000V RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| MDD312-22io1 | 制造商:n/a 功能描述:_ |
發布緊急采購，3分鐘左右您將得到回復。