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參數資料
| 型號： | MDI75-12A3 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT Modules - Short Circuit SOA Capability Square RBSOA |
| 中文描述： | 90 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-7 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 108K |
| 代理商： | MDI75-12A3 |
2000 IXYS All rights reserved
1 - 4
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
MII 75-12 A3
MID 75-12 A3
MDI 75-12 A3
Symbol
Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 20 k
1200
1200
V
V
V
GES
V
GEM
Continuous
Transient
20
30
V
V
I
C25
I
C80
I
CM
T
C
= 25 C
T
C
= 80 C
T
C
= 80 C, t
p
= 1 ms
90
60
120
A
A
A
t
SC
(SCSOA)
V
GE
= ±15 V, V
CE
= V
CES
, T
J
= 125 C
R
G
= 22 , non repetitive
10
s
RBSOA
V
GE
= ±15 V, T
J
= 125 C, R
G
= 22
Clamped inductive load, L = 100 H
I
CM
= 100
V
CEK
< V
CES
A
P
tot
T
C
= 25 C
370
W
T
J
T
stg
150
C
C
-40 ... +150
V
ISOL
50/60 Hz, RMS
I
ISOL
1 mA
Insulating material: Al
2
O
3
t = 1 min
t = 1 s
4000
4800
V~
V~
M
d
Mounting torque (module)
2.25-2.75
20-25
2.5-3.7
22-33
Nm
lb.in.
Nm
lb.in.
(teminals)
d
S
d
A
a
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
12.7
9.6
50
mm
mm
m/s
2
Weight
Typical
130
4.6
g
oz.
Data according to a single IGBT/FRED unless otherwise stated.
5
4
6
7
2
3
1
MII
2
3
1
5
4
MID
2
3
1
6
7
MDI
7
6
3
2
1
4
5
E 72873
Features
G
NPT IGBT technology
G
low saturation voltage
G
low switching losses
G
switching frequency up to 30 kHz
G
square RBSOA, no latch up
G
high short circuit capability
G
positive temperature coefficient for
easy parallelling
G
MOS input, voltage controlled
G
ultra fast free wheeling diodes
G
package with DCB ceramic base plate
G
isolation voltage 4800 V
G
UL registered E72873
Advantages
G
space and weight savings
G
reduced protection circuits
Typical Applications
G
AC and DC motor control
G
AC servo and robot drives
G
power supplies
G
welding inverters
I
C25
V
CES
V
CE(sat) typ.
= 2.2 V
= 90 A
= 1200 V
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