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參數資料
| 型號： | MDS1100 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | a high power COMMON BASE bipolar transistor. |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 55TU-1, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 129K |
| 代理商： | MDS1100 |
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
MDS1100
1100 Watts, 50 Volts
Pulsed Avionics at 1030 MHz
GENERAL DESCRIPTION
The MDS1100 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems at 1030 MHz, with the pulse width and duty
required for MODE-S applications. The device has gold thin-film metalization
and emitter ballasting for proven highest MTTF. The transistor includes input
and output prematch for broadband capability. Low thermal resistance package
reduces junction temperature, extends life.
CASE OUTLINE
55TU-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25
°
C
1
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
Emitter to Base Voltage (BV
ebo
)
Collector Current (I
c
)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
8750 W
65 V
4.5 V
100 A
-65 to +200
°
C
+200
°
C
ELECTRICAL CHARACTERISTICS @ 25
°
C
SYMBOL CHARACTERISTICS
Power Out
Power Gain
η
c
Collector Efficiency
R
L
Return Loss
Tr
Rise Time
Pd
Pulse Droop
VSWR
Load Mismatch Tolerance
1
TEST CONDITIONS
MIN
TYP
MAX
UNITS
P
out
P
g
F = 1030 MHz, V
cc
= 50 Volts
Note 2
F = 1030 MHz, V
cc
= 50 Volts
Note 2
1000
W
8.9
45
dB
%
11
4.0:1
dB
nS
dB
100
0.7
FUNCTIONAL CHARACTERISTICS @ 25
°
C
BV
ebo
BV
ces
h
FE
θ
jc
1
Emitter to Base Breakdown
Collector to Emitter Breakdown Ic = 100 mA
DC – Current Gain
Thermal Resistance
Ie = 50 mA
3.5
65
20
V
V
Vce = 5V, Ic = 5A
0.02
°
C/W
NOTES: 1. At rated output power and pulse conditions
2.
128 μs burst, 0.5 μs on/0.5 μs off, 6.4 ms period, Pin = 130 Watts
Rev B, September 2005
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