
Advanced Technical Information
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
1 - 1
2000 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
Features
HiPerFRED
TM
diode chips
- fast reverse recovery
- low operating forward voltage
- low leakage current
- avalanche capability
Industry Standard package
- with isolated DCB ceramic base plate
- UL registered E72873
Applications
Topologies
- dual diode with common cathode
- high current single diode with pins 1
and 3 paralleled
Circuits
- free wheeling diode of choppers,
H-bridges, phaselegs etc.
- secondary rectifier for switched
mode power supplies, welders etc.
HiPerFRED
TM
Epitaxial Diode
dual diode, common cathode
MEK 600-04 DA
V
RRM
= 400 V
I
FAVM
= 880 A
t
rr
= 220 ns
V
RSM
V
V
RRM
V
Type
400
400
MEK 600-04DA
Symbol
Conditions
Maximum Ratings
I
FAVM
I
FAVM
T
C
= 25
°
C; rectangular, d = 0.5
T
C
= 80
°
C; rectangular, d = 0.5
880
575
A
A
I
FSM
T
VJ
= 25
°
C; t = 10 ms (50 Hz), sine
tbd
A
T
VJ
T
stg
-40...+150
-40...+125
°
C
°
C
P
tot
T
C
= 25
°
C
1100
W
V
ISOL
50/60 Hz, RMS; I
ISOL
≤
1 mA
3600
V~
M
d
Mounting torque with screw M5
Terminal connection torque
2.25-2.75/20-25
4.5-5.5/40-48
Nm/lb.in.
Nm/lb.in.
a
Allowable acceleration
50
m/s
2
Symbol
Conditions
Characteristic Values
typ.
max.
min.
I
R
T
VJ
= 25
°
C V
R
= V
RRM
T
VJ
= 125
°
C V
R
= V
RRM
6
mA
mA
6
V
F
I
F
= 400 A;
T
VJ
= 125
°
C
T
VJ
= 25
°
C
1.1
1.4
V
V
t
rr
I
RM
V
= 100 V; -di
/dt = 900 A/μs
I
F
= 400 A; T
VJ
= 125
°
C
220
80
ns
A
R
thJS
R
thJC
0.11
0.22
K/W
K/W
d
S
d
A
Creeping distance on surface
Strike distance through air
12.7
9.6
mm
mm
Weight
150
g
Data according to IEC 60747
Dimensions in mm (1 mm = 0.0394")
1
2
3
1
2
3