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參數(shù)資料
| 型號(hào)： | MG600Q1US61 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA IGBT Module Silicon N Channel IGBT |
| 中文描述： | 東芝IGBT模塊IGBT的硅?頻道 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 234K |
| 代理商： | MG600Q1US61 |
MG600Q1US61
2002-10-04
1
TOSHIBA IGBT Module Silicon N Channel IGBT
MG600Q1US61
High Power Switching Applications
Motor Control Applications
High input impedance
High speed: t
f
= 0.3 μs (max)
Inductive load
Low saturation voltage: V
CE (sat)
= 2.6 V (max)
The electrodes are isolated from case.
Enhancement-mode
Equivalent Circuit
Maximum Ratings
(Tc 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V
CES
1200
V
Gate-emitter voltage
V
GES
20
V
Collector current
DC (Tc 80°C)
I
C
600
A
Forward current
DC (Tc 80°C)
I
F
600
A
Collector power dissipation
(Tc 25°C)
P
C
5400
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
40 to 125
°C
Isolation voltage
V
isol
2500
(AC 1 minute)
Vrms
Terminal
3
N·m
Screw torque
Mounting
3
N·m
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-109F1A
Weight: 465 g (typ.)
G
E
E
C
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