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參數資料
| 型號： | MG800J2YS50A |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA IGBT Module Silicon N Channel IGBT |
| 中文描述： | 東芝IGBT模塊IGBT的硅?頻道 |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 211K |
| 代理商： | MG800J2YS50A |
MG800J2YS50A
2002-10-31
1
TOSHIBA IGBT Module Silicon N Channel IGBT
MG800J2YS50A
High power switching applications
Motor control applications
The electrodes are isolated from case.
Enhancement-mode
Thermal output terminal (TH)
Equivalent Circuit
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V
CES
600
V
Gate-emitter voltage
V
GES
20
V
Collector current
DC
I
C
800
A
Forward current
DC
I
F
800
A
Collector power dissipation
(Tc 25°C)
P
C
2900
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
40~125
°C
Isolation voltage
V
Isol
2500
(AC 1 min)
V
Terminal: M8
10
N
m
Screw torque
Mounting: M5
3
N
m
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-126A1A
Weight: 680 g (typ.)
TH1
TH2
G1
Fo1
E1
G2
Fo2
E2
E1/C2
Ｃ
1
E2
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