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參數(shù)資料
| 型號： | MGF0951P |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | PLASTIC, LEADLESS PACKAGE-3 |
| 文件頁數(shù)： | 1/42頁 |
| 文件大?。?/td> | 1232K |
| 代理商： | MGF0951P |
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MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0951P
L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
DESCRIPTION
The MGF0951P GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
High output power
Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
High power gain
Glp=13dB(TYP.)
@f=2.15GHz
High power added efficiency
ηadd=50%(TYP.) @f=2.15GHz,Pin=20dBm
Plastic Mold Lead-less PKG
APPLICATION
For L/S Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V
Ids=200mA
Rg=500
Delivery
Tape & Reel(1.5K)
Absolute maximum ratings
(Ta=25°C)
Symbol
Parameter
Ratings
Unit
VGSO
Gate to sourcebreakdown voltage
-15
V
VGDO
Gate to drain breakdown voltage
-15
V
ID
Drain current
800
mA
IGR
Reverse gate current
-2.5
mA
IGF
Forward gate current
5.4
mA
PT
Total power dissipation
6.0
W
Tch
Cannel temperature
150
°C
Tstg
Storage temperature
-40 to +150
°C
Recommended maximum ratings
(Ta=25°C)
Symbol
Parameter
Ratings
Unit
Tch
Cannel temperature
150
°C
Electrical characteristics
(Ta=25°C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=2.5mA
-1
-3
-5
V
gm
Transconductance
VDS=3V,ID=300mA
--
200
--
mS
Po
Output power
VDS=10V,ID=200mA,f=2.15GHz
29.5
31
--
dBm
ηadd
*1
Power added Efficiency
*1:Pin=20dBm, *2:Pin=10dBm
--
50
--
%
GLP
*2
Linear Power Gain
*3:f1=2.15GHz,f2=2.16GHz
11
13
--
dB
IM3
*3
3
rd order Modulation Distortion
Po(SCL)=20dBm
--
-45
--
dBc
Rth(ch-c)
Thermal Resistance
*1
Vf Method
--
20
25
°C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
(1/42)
Mitsubishi Electric
Mar./2005
Fig.1
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