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參數資料
| 型號： | MGF491XG |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | SUPER LOW NOISE InGaAs HEMT |
| 中文描述： | 超低噪聲銦鎵砷遷移率晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 19K |
| 代理商： | MGF491XG |
MGF491xG Series
MITSUBISHI SEMICONDUCTOR GaAs FET
SUPER LOW NOISE InGaAs HEMT
Nov. ′97
Typ
–
Max
–
50
Min
-3
–
15
-0.1
–
12.0
–
–
Limits
Parameter
Test conditions
DESCRIPTION
The MGF491xG series super-low-noise HEMT(High Electron
Mobility Transistor) is designed for use in L to Ku band amplifiers.
The
hermetically
sealed
metal-ceramic
minimumu parasitic losses, and has a configuration suitable for
microstrip circuits.
The MGF491*G series is mounted in the super 12 tape.
package
assures
FEATURES
Low noise figure
MGF4916G:NFmin.=0.80dB(MAX.)
MGF4919G:NFmin.=0.50dB(MAX.)
High associated gain
Gs=12.0dB(MIN.)
@f=12GHz
@f=12GHz
APPLICATION
L to Ku band low noise amplifiers.
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
V
DS
=2V,I
D
=10mA
Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
(T
a
=25C)
Symbol
Parameter
V
GDO
V
GSO
Gate to source voltage
I
D
Drain current
ELECTRICAL CHARACTERISTICS
(T
a
=25C)
Symbol
Unit
V
(BR)GDO
I
GSS
I
DSS
V
Gs(off)
gm
G
S
Saturated drain current
Gate to source cut-off voltage
Transconductance
Associated gain
OUTLINE DRAWING
Unit:millimeters
-1.5
–
–
0.80
60
V
μA
mA
V
mS
dB
dB
dB
V
GS
=-2V,V
DS
=0V
V
GS
=0V,V
DS
=2V
V
DS
=2V,I
D
=500μA
V
DS
=2V,I
D
=10mA
V
DS
=2V,I
D
=10mA
f=12GHz
–
–
–
GD-16
Ratings
-4
-4
60
125
P
T
T
ch
T
stg
Unit
V
V
mA
Gate to drain voltage
Total power dissipation
Channel temperature
Storage temperature
50
-65 to +125
mW
C
C
Gate to drain breakdown voltage
Gate to source leakage current
75
13.5
–
–
NFmin.
2
2
1
3
1.8±0.2
0.5±0.15
4.0±0.2
1.85±0.2
0.5±0.15
GATE
SOURCE
DRAIN
3
2
1
Minimum noise figure
I
G
=-10μA
0.50
MGF4919G
MGF4916G
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