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參數資料
| 型號： | MGFC39V5258 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 1200uF; Voltage: 6.3V; Case Size: 8x15 mm; Packaging: Bulk |
| 中文描述： | 5.2 - 5.8GHz頻段8瓦特內部匹配砷化鎵場效應管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 99K |
| 代理商： | MGFC39V5258 |
相關PDF資料 |
PDF描述 |
|---|---|
| MGFC39V5964A | 5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET |
| MGFC39V3436 | 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET |
| MGFC40V3742A | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 1500uF; Voltage: 6.3V; Case Size: 10x12.5 mm; Packaging: Bulk |
| MGFC40V4450A | 4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET |
| MGFC40V7177A | 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MGFC39V5258_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC39V5258_97 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET |
| MGFC39V5864 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC39V5867 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.8~6.75GHz BAND 8W INTERNALLY MATCHED GaAs FET |
| MGFC39V5867_12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
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