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參數資料
| 型號： | MGFC45V5053A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| 中文描述： | 5.05 - 5.25GHz帶32W內部匹配砷化鎵場效應管 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 16K |
| 代理商： | MGFC45V5053A |
MGFC45V5053A
MITSUBISHI SEMICONDUCTOR <GaAs FET>
5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
DESCRIPTION
The MGFC45V5053A is an internally impedance matched
GaAs power FET especially designed for use in 5.05~5.25
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MITSUBISHI
ELECTRIC
%
dBc
°C/W
*1 : Channel to case
*2 : Item-51,2tone test, Po=34.5dBm Single Carrier Level, f=5.05, 5.15, 5.25GHz, Delta f=5MHz
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
Gate to Source cut-off voltage
Output power at 1dB gain
compression
Linear power gain
V
DS
=3V, I
GS
=0V
V
DS
=3V, I
D
=8V
V
DS
=3V, I
D
=160mA
V
S
V
8
—
V
DS
=10V, I
D
=8A, f=5.05~5.25GHz
45
dBm
P.A.E.
IM3 *2
Rth (ch-c)
Power added efficiency
3rd order IM distortion
Thermal resistance
34
-45
1.0
0.8
Forward gate current
168
mA
Parameter
Ratings
Unit
Gate to drain voltage
-15
V
-15
Gate to source voltage
20
Drain current
-80
A
Channel temperature
-65 ~ +175
°C
5.05~5.25GHz band amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
V
DS
=10V
I
D
=8A
RG=25
Refer to Bias Procedure
APPLICATION
*1
G
LP
P
1dB
VGS (off)
—
—
-5
Limits
Storage temperature
*1 : Tc=25°C
Total power dissipation
I
GF
Symbol
V
GDO
V
GSO
I
D
Tch
Tstg
P
T
I
GR
Reverse gate current
175
150
W
mA
V
*1
—
—
—
—
-42
—
-2
FEATURES (TARGET)
Internally matched to 50 (
) system
High power gain
G
LP
=10.0dB (TYP.) @f=5.05~5.25GHz
High power added efficiency
P.A.E.=33% (TYP.) @f=5.05~5.25GHz
Low distortion [item -51]
IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.
High output power
P
1dB
=32W (TYP.) @f=5.05~5.25GHz
24
—
—
44
OUTLINE DRAWING
Until : millimeters (inches)
GF-38
(1) GATE
(2) Source (FLANGE)
(3) DRAIN
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
°C
Transconductance
Gm
Saturated drain current
I
DSS
V
f
method
9.5
dB
—
9
20.4±0.2 (0.803±0.008)
16.7 (0.658)
0.6±0.15
(0.024±0.006)
24±0.3 (0.945±0.012)
R1.2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MGFC45V5867 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5964A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5964A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V6472A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V6472A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
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