型號: | MGFK30V4045 |
廠商: | Mitsubishi Electric Corporation |
英文描述: | 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET |
中文描述: | 14.0頻率在14.5GHz頻段1W的內部匹配砷化鎵場效應管 |
文件頁數: | 1/2頁 |
文件大小: | 80K |
代理商: | MGFK30V4045 |
相關PDF資料 |
PDF描述 |
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MGFK35V2228 | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 2700uF; Voltage: 10V; Case Size: 12.5x20 mm; Packaging: Bulk |
MGFK35V2732 | 12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET |
MGFK35V4045 | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 470uF; Voltage: 10V; Case Size: 8x11.5 mm; Packaging: Bulk |
MGFK37V4045 | DIODE ZENER TRIPLE ISOLATED 200mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-363 3K/REEL |
MGFK38A3745 | 13.75-14.50GHz BAND 6W INTERNALLY MATCHED GaAs FET |
相關代理商/技術參數 |
參數描述 |
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MGFK30V4045_05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET |
MGFK30V4045_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:X/Ku band internally matched power GaAs FET |
MGFK33V4045 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET |
MGFK33V4045_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:X/Ku band internally matched power GaAs FET |
MGFK33V4045_97 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET |