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參數資料
| 型號： | MGP15N43CL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Internally Clamped N-Channel IGBT |
| 中文描述： | 15 A, 460 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數： | 2/4頁 |
| 文件大小： | 70K |
| 代理商： | MGP15N43CL |
2
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Clamp Voltage
(IC = 1.0 mA, TJ = –40
°
C to 175
°
C)
V(BR)CES
—
430
—
Vdc
Zero Gate Voltage Collector Current
(VCE = 360 V, VGE = 0 V)
(VCE = 360 V, VGE = 0 V, TJ = 150
°
C)
ICES
—
—
—
—
10
150
μ
Adc
Gate–Emitter Clamp Voltage
(IG = 5.0 mA)
V(BR)GES
17
—
22
Vdc
Gate–Emitter Leakage Current
(VGE = 10 V)
IGES
—
—
10
μ
Adc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VGE = VCE, IC = 1.0 mA)
Threshold Temperature Coefficient (Negative)
VGE(th)
1.3
—
1.8
4.4
2.1
—
Vdc
mV/
°
C
Collector–to–Emitter On–Voltage
(VGE = 3.5 V, IC = 6.0 A)
(VGE = 4.0 V, IC = 10 A, TJ = 150
°
C)
VCE(on)
—
—
—
—
2.0
1.8
Volts
Forward Transconductance
(VCE = 5.0 V, IC = 10 A)
gfe
8.0
20
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VCC = 15 V, VGE = 0 V,
f = 1.0 MHz)
15 V V
Cies
Coes
Cres
—
TBD
—
pF
Output Capacitance
—
TBD
—
Transfer Capacitance
—
TBD
—
SWITCHING CHARACTERISTICS (1)
Turn–Off Delay Time
(VCC = 400 V,C
(CC
RG = 1.0 k
, L = 300 H)
td(off)
tf
td(on)
tr
—
TBD
—
Sec
Fall Time
,
—
TBD
—
Turn–On Delay Time
(VCC = 10 V,C
(CC
RG = 1.0 k
,
RL = 1.0
)
—
TBD
—
Sec
Rise Time
,
—
TBD
—
Gate Charge
(VCC = 350 V, IC = 15 A,
VGE = 5.0 V)
350 V I
QT
Q1
Q2
—
TBD
—
nC
—
TBD
—
—
TBD
—
(1) Pulse Test: Pulse Width
≤
300
μ
S, Duty Cycle
≤
2%.
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