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參數(shù)資料
| 型號： | MGSF2N02ELT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2.8 Amps, 20 Volts, N−Channel SOT−23 |
| 中文描述： | 2.8 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 54K |
| 代理商： | MGSF2N02ELT3 |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 2
1
Publication Order Number:
MGSF2N02EL/D
MGSF2N02EL
Preferred Device
Power MOSFET
2.8 Amps, 20 Volts, NChannel SOT23
These miniature surface mount MOSFETs low R
DS(on)
assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry.
Features
PbFree Packages are Available
Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
Miniature SOT23 Surface Mount Package Saves Board Space
I
DSS
Specified at Elevated Temperature
Applications
DCDC Converters
Power Management in Portable and Battery Powered Products, ie:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
Vdc
GatetoSource Voltage Continuous
V
GS
±
8.0
Vdc
Drain Current
Continuous @ T
A
= 25
°
C
Single Pulse (t
p
= 10 s)
I
D
I
DM
2.8
5.0
A
Total Power Dissipation @ T
A
= 25
°
C
P
D
1.25
W
Operating and Storage Temperature
Range
T
J
, T
stg
55 to
150
°
C
Thermal Resistance
JunctiontoAmbient (Note 1)
Thermal Resistance
JunctiontoAmbient (Note 2)
R
JA
100
300
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. 1” Pad, t < 10 sec.
2. Min pad, steady state.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
D
G
S
NChannel
SOT23
CASE 318
STYLE 21
MARKING
DIAGRAM
NT M
NT
M
= Device Code
= Date Code
PIN ASSIGNMENT
3
2
1
Drain
Gate
2
1
3
Source
2.8 A, 20 V
R
DS(on)
= 85 m (max)
Preferred
devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGSF2N02ELT3G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2P02HD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 20 Volts |
| MGSF2P02HDT1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 20V 2.9A 6-Pin TSOP T/R |
| MGSF2P02HDT3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 20 Volts |
| MGSF3433VT1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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