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參數資料
| 型號： | MGW14N60ED |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 18 A, 600 V, N-CHANNEL IGBT, TO-247AE |
| 文件頁數： | 4/6頁 |
| 文件大?。?/td> | 154K |
| 代理商： | MGW14N60ED |
4
Motorola IGBT Device Data
Figure 5. Capacitance Variation
Figure 6. Gate–to–Emitter Voltage
versus Total Charge
Figure 7. Total Energy Losses versus
Gate Resistance
Figure 8. Total Energy Losses versus
Junction Temperature
Figure 9. Total Energy Losses versus
Collector Current
Figure 10. Turn–Off Energy Losses
versus Gate Resistance
5
10
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
2400
1600
800
0
Qg, TOTAL GATE CHARGE (nC)
20
0
20
16
12
4
0
40
C
15
25
20
80
60
8
V
Cies
Coes
Cres
TJ = 25
°
C
VGE = 0 V
QT
Q2
Q1
TJ = 25
°
C
VCC = 300 V
IC = 10 A
65
5
RG, GATE RESISTANCE (OHMS)
1.75
1.25
0.75
E
0.25
20
35
50
TJ = 125
°
C
VDD = 360 V
VGE = 15 V
IC = 10 A
7.5 A
5.0 A
,
T
45
5
RG, GATE RESISTANCE (OHMS)
0.8
0.6
0.4
E
0.2
15
25
35
TJ = 125
°
C
VDD = 360 V
VGE = 15 V
IC = 10 A
7.5 A
5.0 A
,
o
TJ, JUNCTION TEMPERATURE (
°
C)
–50
0.2
0
–25
0
25
0.4
0.8
0.6
50
75
100
125
VCC = 360 V
VGE = 15 V
RG = 20
IC = 10 A
7.5 A
5.0 A
E
,
T
1.0
10
7.5
0
IC, COLLECTOR CURRENT (AMPS)
0.8
0.4
0
5
0.6
0.2
1.0
TJ = 125
°
C
VCC = 360 V
VGE = 15 V
RG = 20
E
,
T
2.5
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