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參數(shù)資料
| 型號(hào)： | MH16S72APHB-6 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
| 中文描述： | 1207959552位（16,777,216 - Word的72位）同步DRAM |
| 文件頁數(shù)： | 1/52頁 |
| 文件大小： | 1045K |
| 代理商： | MH16S72APHB-6 |
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MH16S72AMA -8,-10,-12
1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
MITSUBISHI LSIs
( / 52 )
1
MITSUBISHI
ELECTRIC
5. Mar.1997
Preliminary Spec.
Some contents are subject to change without notice.
MIT-DS-0128-0.0
DESCRIPTION
The MH16S72AMA is 16777216 - word by 72-bit
Synchronous DRAM module. This consists of
eighteen industry standard 16Mx4 Synchronous
DRAMs in TSOP and one industory standard
EEPROM in TSSOP.
The mounting of TSOP on a card edge Dual Inline
package provides any application where high
densities and large quantities of memory are
required.
This is a socket type - memory modules, suitable for
easy interchange or addition of modules.
FEATURES
Frequency
Clock frequency 125MHz/100MHz/83MHz
single 3.3V±0.3V power supply
Fully synchronous operation referenced to clock rising
edge
Burst length- 1/2/4/8(programmable)
Dual bank operation controlled by BA0,1(Bank Address)
-12
83MHz
/CAS latency- 2/3(programmable)
APPLICATION
main memory or graphic memory in computer systems
Auto precharge / All bank precharge controlled by A10
Burst type- sequential / interleave(programmable)
Column access - random
LVTTL Interface
Auto refresh and Self refresh
4096 refresh cycle /64ms
CLK Access Time
8ns(CL=3)
-8
125MHz
6ns(CL=3)
-10
100MHz
8ns(CL=3)
1pin
10pin
11pin
40pin
41pin
84pin
F
85pin
94pin
95pin
124pin
125pin
168pin
B
Utilizes industry standard 16M x 4 Synchronous DRAMs
TSOP and industry standard EEPROM in TSSOP
168-pin (84-pin dual in-line package)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MH16S72APHB-7 | 1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
| MH16S72APHB-8 | 1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
| MH16S72BAMD-10 | 1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM |
| MH16S72BAMD-6 | 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH16S72BAMD-7 | 1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MH16S72APHB-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
| MH16S72APHB-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
| MH16S72AVJB-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH16S72BAMD-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM |
| MH16S72BAMD-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
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