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參數資料
型號: MH4V6445BXJJ-6
廠商: Mitsubishi Electric Corporation
英文描述: HYPER PAGE MODE 268435456-BIT (4194304-WORD BY 64-BIT)DYNAMIC RAM
中文描述: 超頁模式268435456位(4194304字,64位)動態隨機存儲器
文件頁數: 1/26頁
文件大小: 152K
代理商: MH4V6445BXJJ-6
MH4V6445BXJJ-5,-6,-5S,-6S
HYPER PAGE MODE 268435456-BIT (4194304-WORD BY 64-BIT)DYNAMIC RAM
MITSUBISHI
ELECTRIC
( / 26 )
1
MITSUBISHI LSIs
Preliminary
Some of contents are subject
to change without notice.
MIT-DS-0233-0.0
24/Jul./1998
DESCRIPTION
This is family of 4194304 - word by 64 - bit dynamic RAM
module. This consists of four industry standard 4Mx16 dynamic
RAMs in TSOP and one industry EEPROM in TSSOP.
The mounting of TSOP on a card edge dual in line package
provides any application where high densities and large of
quantities memory are required.
This is a socket-type memory module,suitable for easy
interchange of addition of modules.
FEATURES
atime
(max.ns)
(time
50
13
MH4V6445BXJJ-5,5S
MH4V6445BXJJ-6,6S
MH4V6445BXJJ-5,5S - - - - 2016 mW(max.)
MH4V6445BXJJ-6,6S - - - - 1872 mW(max.)
All input, output LVTTL compatible and low capacitance
operating power dissipation
single 3.3V± 0.3V supply
Low stand-by power dissipation
7.2mW- - - - - - - - - LVCMOS input level
APPLICATION
Main memory unit for computer,Microcomputer
memory,Refresh memory for CRT.
Utilizes industry standard 4Mx16 RAMs in TSOP
and industry standard EEPROM in TSSOP.
Includes decoupling capacitor(0.22uFx4)
Hyper page mode , Read-modify-write,
CAS before RAS refresh,Hidden refresh capabilities.
Early-write mode,OE and W to control output buffer
impedance.
ADDRESS
Row Add. Col Add.
aCAS
Address
atime
(max.ns)
25
Cycle
time
(min.ns)
60
15
30
84
104
(time
13
aOE
15
*:Applicable to self refresh version(MH4V645/6445AXJJ-5S,-6S)
only
Self refresh capability*
Self refresh current - - - - 1600 uA(max.)
MH4V6445BXJJ
Part No.
Refresh
Refresh Cycle
Normal
A0~A11
A0~A9
/RAS only Ref,Normal R/W
CBR Ref,Hidden Ref
4096/64ms
S-Version
4096/128ms
相關PDF資料
PDF描述
MH4V6445BXJJ-6S HYPER PAGE MODE 268435456-BIT (4194304-WORD BY 64-BIT)DYNAMIC RAM
MH64D72KLG-10 4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
MH64D72KLG-75 4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
MH64D72KLH-10 4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
MH64D72KLH-75 4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
相關代理商/技術參數
參數描述
MH4V6445BXJJ-6S 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HYPER PAGE MODE 268435456-BIT (4194304-WORD BY 64-BIT)DYNAMIC RAM
MH4V644AWXJ-5 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 268435456 - BIT ( 4194304 - WORD BY 64 - BIT ) DYNAMIC RAM
MH4V644AWXJ-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 268435456 - BIT ( 4194304 - WORD BY 64 - BIT ) DYNAMIC RAM
MH4V644AXJJ 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 268435456-BIT (4194304-WORD BY 64-BIT)DYNAMIC RAM
MH4V644AXJJ-5 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST PAGE MODE 268435456-BIT (4194304-WORD BY 64-BIT)DYNAMIC RAM
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