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參數資料
| 型號： | MIC94031BM4 |
| 廠商： | MICREL INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 1000 mA, 13.5 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-143, 4 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 33K |
| 代理商： | MIC94031BM4 |
MIC94030/94031
Micrel
6
1997
6-41
MIC94030/94031
TinyFET P-Channel MOSFET
Preliminary Information
General Description
The MIC94030 and MIC94031 are 4-terminal silicon gate
P-channel MOSFETs that provide low on-resistance in a very
small package.
Designed for high-side switch applications where space is
critical, the MIC94030/1 exhibits an on-resistance of typically
0.75
at 4.5V gate-to-source voltage. The MIC94030/1 also
operates with only 2.7V gate-to-source voltage.
The MIC94030 is the basic 4-lead P-channel MOSFET. The
MIC94031 is a variation that includes an internal gate pull-up
resistor that can reduce the system parts count in many
applications.
The 4-terminal SOT-143 package permits a substrate con-
nection separate from the source connection. This 4-terminal
configuration improves the
θ
JA
(improved heat dissipation)
and makes analog switch applications practical.
The small size, low threshold, and low R
DS(on)
make the
MIC94030/1 the ideal choice for PCMCIA card sleep mode or
distributed power management applications.
Features
13.5V minimum drain-to-source breakdown
0.75
typical on-resistance
at 4.5V gate-to-source voltage
0.45
typical on-resistance
at 10V gate-to-source voltage
Operates with 2.7V gate-to-source voltage
Separate substrate connection for added control
Industry’s smallest surface mount package
Applications
Distributed power management
PCMCIA card power management
Battery-powered computers, peripherals
Hand-held bar-code scanners
Portable communications equipment
Ordering Information
Part Number
MIC94030BM4
MIC94031BM4
* Operating Junction Temperature
Temperature Range*
–55
°
C to +150
°
C
–55
°
C to +150
°
C
Package
SOT-143
SOT-143
Gate
Source
Drain
Substrate
Schematic Symbol
MIC94030
MIC94031
Schematic Symbol
Pin Configuration
SOT-143 Package (M4)
Typical PCB Layout
S
D
G
SS
PCB heat sink
plane improves
heat dissipation
PCB traces
G
S
D
SS
~500k
Internal
gate-to-source
pull-up resistor
G
S
D
SS
Functional Diagrams
Substrate
Source
Gate
Drain
P3x
Part
Identification
Part Number
MIC94030BM4
MIC94031BM4
Identification
P30
P31
Patents 5,355,008; 5,589,702
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MIC94031BM4 TR | 功能描述:MOSFET P-CH 16V 1A SOT-143 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:TinyFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| MIC94031BM4TR | 制造商:RF Micro Devices Inc 功能描述: |
| MIC94031YM4 | 制造商:Rochester Electronics LLC 功能描述: 制造商:RF Micro Devices Inc 功能描述: 制造商:Micrel Inc 功能描述: |
| MIC94031YM4 TR | 功能描述:MOSFET Dual P-Channel MOSFET (Lead Free) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MIC94031YM4-TR | 功能描述:MOSFET P-CH 16V 1A SOT-143 制造商:microchip technology 系列:TinyFET? 包裝:剪切帶（CT） 零件狀態:有效 FET 類型:MOSFET P 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:16V 電流 - 連續漏極（Id）（25°C 時）:1A（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:450 毫歐 @ 100mA，10V 不同 Id 時的 Vgs（th）（最大值）:1.4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:- 不同 Vds 時的輸入電容（Ciss）:100pF @ 12V 功率 - 最大值:568mW 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-253-4，TO-253AA 供應商器件封裝:SOT-143 標準包裝:1 |
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